1.

国際会議録
国際会議録
1. Planar 6H-SiC p-n Junctions Prepared by Selective Epitaxial Growth
Christiansen,K. ; Dalibor,T. ; Helbig,R. ; Christiansen,S. ; Strunk,H.P.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.135-138,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
2.

国際会議録
国際会議録
2. Oxygen-Related Defect Centers in 4H Silicon Carbide
Dalibor,T. ; Pensl,G. ; Yamamoto,T. ; Kimoto,T. ; Matsunami,H. ; Sridhara,S.G. ; Nizhner,D.G. ; Devaty,R.P. ; Choyke,W.J.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.553-556,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
3.

国際会議録
国際会議録
3. Dn Revisited in an Modern Guise-6H and 4H SiC
Sridhara,S.G. ; Nizhner,D.G. ; Devaty,R.P. ; Choyke,W.J. ; Dalibor,T. ; Pensl,G. ; Kimoto,T.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.493-496,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
4.

国際会議録
国際会議録
4. Ground States of the Ionized Isoelectronic Ti Acceptor in SiC
Dalibor,T. ; Pensl,G. ; Nordeil,N. ; Schdner,A. ; Choyke,W.J.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.537-540,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268