1.

国際会議録
国際会議録
1. Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor
B. Thomas ; D.M. Hansen ; J. Zhang ; M.J. Loboda ; J. Uchiyama
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.103-108,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
2.

国際会議録
国際会議録
2. Carrier Lifetime Analysis by Microwave Photoconductive Decay (μ-PCD) for 4H SiC Epitaxial Wafers
G.Y. Chung ; M.J. Loboda ; M.F. MacMillan ; J.W. Wan ; D.M. Hansen
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.323-326,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557