1.

国際会議録
国際会議録
1. Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates
R. Yakimova ; C. Virojanadara ; D. Gogova ; M. Syväjärvi ; D. Siche
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.565-568,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
2.

国際会議録
国際会議録
2. Free Standing AlN Single Crystal Grown on Pre-Patterned and In Situ Patterned 4H-SiC Substrates
G.R. Yazdi ; K. Vassilevski ; J.M. Córdoba ; D. Gogova ; I.P. Nikitina
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.1187-1190,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648