1.

国際会議録
国際会議録
1. Process Modeling for Advanced Devices
Law, Mark E. ; Jones, Kevin S. ; Radic, Ljubo ; Crosby, Robert ; Clark, Mark ; Gable, Kevin ; Ross, Carrie
出版情報: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.69-76,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 810
2.

国際会議録
国際会議録
2. The Effect of Ge Content in MBE Si_(1-x)Ge_x on the Evolution of 311 Defects
Crosby, Robert ; Frazer, Jackie ; Jones, K.S. ; Law, M.E. ; Larsen, A. Nylandsted ; Hansen, J. Lundsgaard
出版情報: Silicon front-end junction formation technologies : symposium held April 2-4, 2002, San Francisco, California, U.S.A..  pp.27-32,  2002.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 717
3.

国際会議録
国際会議録
3. The Effect of SiGe Barriers on the Thermal Stability of Highly B-Doped Si Surface Layers
Thompson, Phillip E. ; Bennett, Joe ; Crosby, Robert ; Twigg, Mark E.
出版情報: Novel materials and processes for advances CMOS : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A..  pp.87-92,  2003.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 745