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DEFECTS PRODUCED BY HIGH ENERGY OXYGEN IONS IMPLANTED IN SILICON

著者名:
掲載資料名:
Ion beam processing of advanced electronic materials : symposium held April 25-27, 1989, San Diego, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
147
発行年:
1989
開始ページ:
197
終了ページ:
206
総ページ数:
10
出版情報:
Pittsburgh, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558990203 [1558990208]
言語:
英語
請求記号:
M23500/147
資料種別:
国際会議録

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