1.

国際会議録
国際会議録
1. The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behaviour
Falster, R. ; Gambaro, D. ; Olmo, M. ; Cornara, M. ; Korb, H.
出版情報: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.135-146,  1998.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 98-13
2.

国際会議録
国際会議録
2. Minority Carrier Diffusion Length Changes in Si Substrate Due to a High Temperature Annealing
Bellutti, P. ; Calderara, M. ; Porrini, M. ; Cornara, M. ; Olmo, M.
出版情報: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.304-312,  1998.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 98-13
3.

国際会議録
国際会議録
3. Impact of silicon substrate oxygen precipitation fine tuning on high density memories retention time
Borionetti, G. ; Falster, R. ; Bertolini, S. ; Cornara, M. ; Olmo, M. ; Chalmers, G. ; Childs, R. ; Marcuccilli, G.
出版情報: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.196-203,  1997.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 97-22
4.

国際会議録
国際会議録
4. The Engineering of Silicon Water Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behavior
Falster, R. ; Gambaro, D. ; Olmo, M. ; Cornara, M. ; Korb, H.
出版情報: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.27-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 510