1.

国際会議録
国際会議録
1. Noise as a Spectroscopic Tool for Semiconductor Characterization
Claeys,C. ; Simoen,E.
出版情報: Proceedings of the Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices.  pp.324-341,  1997.  Pennington, NJ.  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3322
2.

国際会議録
国際会議録
2. Tin Doping Effects in Silicon
Simoen,E. ; Claeys,C. ; Neimash,V.B. ; Kraitchinskii,A. ; Kras'ko,M. ; Puzenko,O. ; Blondeel,A. ; Clauws,P.
出版情報: High Purity Silicon VI : proceedings of the sixth International Symposium.  pp.223-235,  2000.  Pennington, N.J., Bellingham, Wash..  Electrochemical Society — SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 4218
3.

国際会議録
国際会議録
3. Lifetime and Leakage Current Studies in Shallow P-N Junctions Fabricated in a Deep High-Energy Boron Implanted P-Well
Poyai,A. ; Simoen,E. ; Claeys,C. ; Rooyackers,R. ; Badenes,G. ; Gaubas,E.
出版情報: High Purity Silicon VI : proceedings of the sixth International Symposium.  pp.403-413,  2000.  Pennington, N.J., Bellingham, Wash..  Electrochemical Society — SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 4218
4.

国際会議録
国際会議録
4. Diode Analysis of Silicon Substrate Quality
Sitnoen,E. ; Poyai,A. ; Claeys,C.
出版情報: Analytical and diagnostic techniques for semiconductor materials, devices and processes : joint proceedings of the symposia on ALTECH 99, satellite symposium to ESSDERC 99, Leuven, Belgium [and] the Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices.  pp.248-258,  1999.  Pennington, N.J..  SPIE - The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3895
5.

国際会議録
国際会議録
5. Lattiee defects in Si1-xGex epitaxial diodes induced by 20-MeV alpha rays
Ohyama,H. ; Vanhellemont,J. ; Simoen,E. ; Claeys,C. ; Takami,Y. ; Hayama,K. ; Sunaga,H. ; Poortmans,J. ; Caymax,M.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.121-126,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
6.

国際会議録
国際会議録
6. Irradiation induced lattice defects in In0.53Ga0.47As PIN photodiodes
Kudou,T. ; Ohyama,H. ; Vanhellemont,J. ; Simoen,E. ; Claeys,C. ; Takami,Y. ; Fujii,A. ; Sunaga,H.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1217-1222,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
7.

国際会議録
国際会議録
7. Determination of stoichiometry and oxygen content in platelike and octahedral oxygen precipitates in silicon with FT-IT spectroscopy
Gryse,O.De ; Clauws,P. ; Vanhellemont,J. ; Claeys,C.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.405-410,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
8.

国際会議録
国際会議録
8. On the Role of Point Defects in Gettering Processes
Vanhellemont,J. ; Claeys,C.
出版情報: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part1  pp.171-176,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 38-41
9.

国際会議録
国際会議録
9. Lattice Defects in High Quality As-Grown CZ Silicon,Studied with Light Scattering and Preferential Etching Techniques
Vanhellemont,J. ; Kissinger,G. ; Graf,D. ; Kenis,K. ; Depas,M. ; Mertens,P. ; Lambert,U. ; Heyns,M. ; Claeys,C. ; Richter,H. ; Wagner,P.
出版情報: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1755-1760,  1995.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 196-201