Gate Oxide Integrity in DRAM Devices: The Influence of Substrate D-Defects
- 著者名:
- 掲載資料名:
- ULSI science and technology, 1995 : proceedings of the Fifth International Symposium on Ultra Large Scale Integration Science and Technology
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 95-5
- 発行年:
- 1995
- 開始ページ:
- 457
- 終了ページ:
- 471
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566770996 [1566770998]
- 言語:
- 英語
- 請求記号:
- E23400/952065
- 資料種別:
- 国際会議録
類似資料:
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9
国際会議録
Evaluation of litho printability of DRAM contact hole patterns with various programmed defects
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Electrochemical Society |
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SPIE-The International Society for Optical Engineering |