1.

国際会議録
国際会議録
1. * High-K Gate Dielectrics: HfO 2, ZrO 2, and Their Silicates
Nieh, R. ; Onishi, K. ; Choi, R. ; Dharmarajan, E. ; Gopalan, S. ; Kang, C.S. ; Lee, J.C.
出版情報: Rapid thermal and other short-time processing technologies II : proceedings of the international symposium.  pp.171-182,  2001.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2001-9
2.

国際会議録
国際会議録
2. 17 Properties of the Interfacial Layer in the High-k Gate Stack and Transistor Performance
Bersuker, G. ; Peterson, J. ; Burnett, J. ; Korkin, A. ; Sim, J.H. ; Choi, R. ; Lee, B. H. ; Greer, J. ; Lysaght, P. ; Huff, H.R.
出版情報: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.141-145,  2005.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2005-05
3.

国際会議録
国際会議録
3. Processing Effects and Electrical Evaluation of ZrO2 Formed by RTP Oxidation of Zr
Nieh, R. ; Qi, W-J. ; Lee, B.H. ; Kang, L. ; Jeon, Y. ; Onishi, K. ; Gopalan, S. ; Kang, C.S. ; Dhrarmarajan, E. ; Choi, R. ; Lee, J.C.
出版情報: Low and high dielectric constant materials : materials science, processing, and reliability issues : proceedings of the fifth international symposium.  pp.214-221,  2000.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2000-5
4.

国際会議録
国際会議録
4. Integration Issues with High k Gate Stacks*
Osburn, C.M. ; Han, S.K. ; Kim, I. ; Campbell, S.A. ; Garfunkel, E. ; Gustafson, T. ; Hauser, J. ; King, T.-J. ; Liu, Q. ; Ranade, P. ; Kingon, A. ; Kwong, D.-L. ; Lee, S.J. ; Lee, C.H. ; Lee, J. ; Onishi, K. ; Kang, C.S. ; Choi, R. ; Cho, H. ; Nich, R. ; Lucovsky, G. ; Hong, J.G. ; Ma, T.P. ; Zhu, W. ; Luo, Z. ; Maria, J.P. ; Wicaksana, D. ; Misra, V. ; Lee, J.J. ; Suh, Y.S. ; Parksons, G. ; Niu, D. ; Stemmer, S.
出版情報: ULSI Process Integration : proceedings of the International Symposium.  pp.375-390,  2003.  Pennington, N.J..  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2003-6
5.

国際会議録
国際会議録
5. Effects of Structural Properties of Hf-Based Gate Stack on Transistor Performance
Bersuker, G. ; Sim, J.H. ; Young, C.D. ; Choi, R. ; Lee, B.H. ; Lysaght, P. ; Brown, G.A. ; Zeitzoff, P.M. ; Gardner, M. ; Murto, R.W. ; Huff, H.R.
出版情報: Integration of advanced micro- and nanoelectronic devices - critical issues and solutions : symposium held April 13-16, 2004, San Francisco, California, U.S.A..  pp.31-36,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 811
6.

国際会議録
国際会議録
6. 44 Charge Trapping in Metal Gate/High-K MOSFETS during Substrate Injection
Srinivasan, P. ; Chowdhury, N. A. ; Peralta, A. ; Misra, D. ; Choi, R. ; Lee, B. H.
出版情報: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.366-375,  2005.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2005-05