1.

国際会議録
国際会議録
1. Are the Models of the Triply Charged Gallium Vacancy and Doubly Charged Gallium Interstitial Alive or Dead?
Cohen, R. M. ; Chen, C. Y. ; Li, W. M. ; Simons, D. S. ; Chi, P. H.
出版情報: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.959-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 378
2.

国際会議録
国際会議録
2. Effect of Fermi Level Pinning at the Surface During OMVPE Growth
Cohen, R. M. ; Chen, C. Y. ; Li, W. M. ; Simons, D. S. ; Chi, P. H.
出版情報: Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A..  pp.875-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 378
3.

国際会議録
国際会議録
3. On Compensation and Impurities in State-of-the-Art GaN Epilayers Grown on Sapphire
Wickenden, A. E. ; Gaskill, D. K. ; Koleske, D. D. ; Doverspike, K. ; Simons, D. S. ; Chi, P. H.
出版情報: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.679-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 395