1.

国際会議録
国際会議録
1. Effects of Initial Nitridation on the Characteristics of SiC-SiO2 Interfaces
Cheong, K.-Y. ; Dimitrijev, S. ; Han, J.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.583-586,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
2.

国際会議録
国際会議録
2. Traps at the Interface of 3C-SiC/SiO2-MOS-Structures
Ciobanu, F. ; Pensl, G. ; Nagasawa, H. ; Schoner, A. ; Dimitrijev, S. ; Cheong, K.-Y. ; Afanas'ev, V.V. ; Wagner, G.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.551-554,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436