1.

国際会議録
国際会議録
1. Understanding And Modeling Ramp Rate Effects On Shallow Junction Formations
Chakravarthi, Srinivasan ; Gencer, Alp H. ; Dunham, Scott T. ; Downey, Daniel F.
出版情報: Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A..  pp.B4.8-,  2001.  Warrendale, PA.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 610
2.

国際会議録
国際会議録
2. Point Defect Properties From Metal Diffusion Experiments-What Does the Data Really Tell Us?
Chakravarthi, Srinivasan ; Dunham, Scott T.
出版情報: Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.47-,  1997.  Pittsburg, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 469
3.

国際会議録
国際会議録
3. Modeling Of Diffusion And Activation Of Low Energy Arsenic Implants In Silicon
Chakravarthi, Srinivasan ; Chidambaram, P.R. ; Machala, Charles ; Jain, Amitabh ; Zhang, Xin
出版情報: Silicon front-end junction formation technologies : symposium held April 2-4, 2002, San Francisco, California, U.S.A..  pp.129-134,  2002.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 717