1.

国際会議録
国際会議録
1. PRESSURE RATIO (Pas/Pga) DEPENDENCE ON LOW TEMPERATURE GaAs BUFFER LAYERS GROWN BY MBE
Lagadas, M. ; Hatzopoulos, Z. ; Calamiotou, M. ; Kayiambaki, M. ; Christou, A.
出版情報: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.383-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 325
2.

国際会議録
国際会議録
2. Effect of High Temperature-Pressure on Strain Relaxation in Thin Layers of Semiconductors Epitaxially Grown on GaAs and Si Substrates
Bak-Misiuk, J. ; Misiuk, A. ; Adamczewska, J. ; Calamiotou, M. ; Kozanecki, A. ; Kuristyn, D. ; Reginski, K. ; Kaniewski, J. ; Georgakilas, A.
出版情報: Atomistic aspects of epitaxial growth.  pp.467-476,  2002.  Dordrecht.  Kluwer Academic Publishers
シリーズ名: NATO science series. Series 2, Mathematics, physics and chemistry
シリーズ巻号: 65