Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs

Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs

著者名:

掲載資料名:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

シリーズ名:

Materials science forum

シリーズ巻号:

457-460

発行年:

2004

開始ページ:

1177

終了ページ:

1180

総ページ数:

4

出版情報:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013364
シリーズID:	PA00000012
会議名:	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
回次:	2003 : 10th
会議開催地:	Lyon, France
会議開催年:	2003.10.05-2003.10.10

類似資料:

1 国際会議録 Influence of Material Properties on Wide-Bandgap Microwave Power Device Characteristics Morvan, E., Kerlain, A., Dua, C., Brylinski, C. Trans Tech Publications	7 国際会議録 Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs Sghaier, N., Bluet, J.M., Souifi, A., Guillot, G., Morvan, E., Brylinski, C. Trans Tech Publications
2 国際会議録 Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals Blanque, S., Perez, R., Godignon, P., Mestres, N., Morvan, E., Kerlain, A., Dua, C., Brylinski, C., Zielinski, M., … Trans Tech Publications	8 国際会議録 Hot-Carrier Luminescence in 4H-SiC MESFETs Banc, C., Bano, E., Ouisse, T., Noblanc, O., Brylinski, C. Trans Tech Publications
3 国際会議録 SiC Microwave Power Devices Morvan, E., Noblanc, O., Dua, C., Brylinski, C. Trans Tech Publications	9 国際会議録 Hot-Carrier Luminescence in 4H-SiC MESFETs Banc, C., Bano, E., Ouisse, T., Noblanc, O., Brylinski, C. Trans Tech Publications
4 国際会議録 Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates Gassoumi, M., Sghaier, N., Dermoul, I., Chekir, F., Maaref, H., Bluet, J.M., Guillot, G., Morvan, E., Noblanc, O., Dua, … Trans Tech Publications	10 国際会議録 Characterization of Power MESFETs on 4H-SiC Conductive and Semi-Insulating Wafers Noblanc,O., Arnodo,C., Chartier,E., Brylinski,C. Trans Tech Publications
5 国際会議録 Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy Bluet, J. M., Gassoumi, M., Dermoul, I., Chekir, F., Maaref, H., Guillot, G., Morvan, E., Dua, C., Brylinski, C. Trans Tech Publications	11 国際会議録 Time Domain and Frequency Analysis of Random Telegraph Signal and the Contributions of G-R Centres to I-V Instabilities in 4H-SiC MESFETs Trabelsi, M., Sghaier, N., Bluet, J.M., Yacoubi, N., Guillot, G., Brylinski, C. Trans Tech Publications
6 国際会議録 Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETs Sghaier, N., Bluet, J.M., Souifi, A., Guillot, G., Morvan, E., Brylinski, C. Trans Tech Publications	12 国際会議録 Noise Behavior of 4H-SiC MESFETs at Low Drain Voltage Banc, C., Royet, A.S., Ouisse, T., Bano, E., Noblanc, O., Brylinski, C. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12