1.

国際会議録
国際会議録
1. CVD of 6H-SiC on Non-Basal Quasi Polar Faces
Y. Shishkin ; S.P. Rao ; O. Kordina ; I. Agafonov ; A.A. Maltsev ; J. Hassan ; A. Henry ; C. Moisson ; S.E. Saddow
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.73-76,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
2.

国際会議録
国際会議録
2. Thermally Induced Surface Reorganization of 3C-SiC(111) Epilayers Grown on Silicon Substrates
M. Portail ; T. Chassagne ; S. Roy ; C. Moisson ; M. Zielinski
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.155-158,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
3.

国際会議録
国際会議録
3. Recent Advances in Surface Preparation of Silicon Carbide and other Wide Band Gap Materials
M. Zielinski ; C. Moisson ; S. Monnoye ; H. Mank ; T. Chassagne
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.753-758,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648