1.

国際会議録
国際会議録
1. High Quality Uniform SiC Epitaxy for Power Device Applications
J. Zhang ; E. Romano ; J. Mazzola ; S.G. Sunkari ; C. Hoff ; I. Sankin ; M.S. Mazzola
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.101-104,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
2.

国際会議録
国際会議録
2. Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers
S.G. Sunkari ; H. Das ; C. Hoff ; Y. Koshka ; J.R.B. Casady
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.423-426,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
3.

国際会議録
国際会議録
3. A thermo/opto/mechanical testbed validation using Cielo
M. Chainyk ; C. Hoff ; E. Larour ; G. Moore ; J. Schiermeier
出版情報: An optical believe it or not : key lessons learned : 11-12 August 2008, San Diego, California, USA.  pp.70710F-1-70710F-11,  2006.  Bellingham, Wash..  Society of Photo-optical Instrumentation Engineers
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 7071