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High Performance, Highly Reliable Gate Oxide Formed with Rapid Thermal Oxidation In-Situ Steam Generation (ISSG) Technique

著者名:
Ma, Y.
Chen, Y.N.
Brown, M.M
Li, F.
Chen, Y.
Eng, J., Jr.
Opila, R.L.
Chabal, Y.J.
Sapjeta, J.
Muller, D.A.
Xing, G.C.
Trowbridge, T.
Khau, M.
Tam, N.
さらに 9 件
掲載資料名:
Rapid thermal and other short-time processing technologies : proceedings of the international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2000-9
発行年:
2000
開始ページ:
179
終了ページ:
186
総ページ数:
8
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566772747 [1566772745]
言語:
英語
請求記号:
E23400/2000-9
資料種別:
国際会議録

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