1.

国際会議録
国際会議録
1. Impact of Annealing Temperature Ramps on the Electrical Activation of N+ and P+ Co-Implanted SiC I.ayers
Blanque, S. ; Perez, R. ; Mestres, N. ; Contreras, S. ; Camassel, J. ; Godignon, P.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.795-798,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation
Blanque, S. ; Lyonnet, J. ; Camassel, J. ; Perez, R. ; Terziyska, P. ; Contreras, S. ; Godignon, P. ; Mestres, N. ; Pascual, J.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.645-648,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
3.

国際会議録
国際会議録
3. Electrical Characterization of Heavily Al Doped 4H-SiC Layer Grown by Vapor-Liquid-Solid Epitaxy in Al-Si Melt
Godignon, P. ; Jacquier, C. ; Blanque, S. ; Montserrat, J. ; Ferro, G. ; Contreras, S. ; Zielinski, M. ; Monteil, Y.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.421-424,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
4.

国際会議録
国際会議録
4. A Highly Effective Edge Termination Design for SiC Planar High Power Devices
Perez, R. ; Mestres, N. ; Blanque, S. ; Tournier, D. ; Jorda, X. ; Godignon, P. ; Nipoti, R.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1253-1256,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
5.

国際会議録
国際会議録
5. Room Temperature Implantation and Activation Kinetics of Nitrogen and Phosphorus in 4H-SiC Crystals
Blanque, S. ; Perez, R. ; Godignon, P. ; Mestres, N. ; Morvan, E. ; Kerlain, A. ; Dua, C. ; Brylinski, C. ; Zielinski, M. ; Camassel, J.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.893-896,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
6.

国際会議録
国際会議録
6. Visible Light Laser Irradiation: a Tool for Implantation Damage Reduction
Camassel, J. ; Peyre, H. ; Brink, D.J. ; Zielinski, M. ; Blanque, S. ; Mestres, N. ; Godignon, P.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.941-944,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
7.

国際会議録
国際会議録
7. Quantitative Evaluation of Implantation Damage and Damage Recovery after Room Temperature Ion-Implantation of N+ and P+ Ions in 6H-SiC
Blanque, S. ; Perez, R. ; Zielinski, M. ; Pernot, J. ; Mestres, N. ; Pascual, J. ; Godignon, P. ; Camassel, J.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.653-656,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436