1.

国際会議録
国際会議録
1. Interstitial Defect Reactions in Silicon
Kimerling,L.C. ; Asom,M.T. ; Benton,J.L. ; Drevinski,P.J. ; Caefer,C.E.
出版情報: Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988.  Part1  pp.141-150,  1989.  Aederlmannsdorf, Switzwelns.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 38-41
2.

国際会議録
国際会議録
2. Dopant enhancement of the 1.54ｦﾌm emission of erbium implanted in silicon
Michel,J. ; Kimerling,L.C. ; Benton,J.L. ; Eaglesham,D.J. ; Fitzgerald,E.A. ; Jacobson,D.C. ; Poate,J.M. ; Xie,Y.-H. ; Fer-rante,R.F.
出版情報: Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991.  Pt.2  pp.653-658,  1992.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 83-87
3.

国際会議録
国際会議録
3. Influence of oxygen precipitates on the measurement of minority carrier diffusion length in p-type silicon material using surface photovoltage technique
Ma,Y. ; Lee,J.L. ; Benton,J.L. ; Boone,T. ; Eaglesham,D.J. ; Higashi,G.S.
出版情報: In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing.  pp.17-24,  1997.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 3215