1.

国際会議録
国際会議録
1. A 0.18 μm CMOS Technology for Elevated Source/Drain MOSFETs Using Selective Silicon Epitaxy
Srivastava, A. ; Sun, J. ; Bellur, K. ; Bartholomew, R. ; O'Neil, P. ; Celik, M. ; Osburn, C.M. ; Masnari, N.A. ; OEztuerk, M.C. ; Westhoff, R. ; Fowler, B.
出版情報: ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology.  pp.571-586,  1997.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 97-3
2.

国際会議録
国際会議録
2. Parasitic Resistance Considerations of Using Elevated Source/Drain for Sub-0.25 μm MOSFET Technology
Sun, J. ; Srivastava, A. ; Bartholomew, R.F. ; Bellur, K. ; Osburn, C.M. ; Masnari, N.A.
出版情報: ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology.  pp.587-600,  1997.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 97-3
3.

国際会議録
国際会議録
3. Sub-Half Micron Elevated Source/Drain NMOSFETS by Low Temperature Selective Epitaxial Deposition
Sun, J. ; Bartholomew, R. F. ; Bellur, K. ; O'Neil, P. A. ; Srivastava, A. ; Violette, K. E. ; Ozturk, M. C. ; Osburn, C. M. ; Masnari, N. A.
出版情報: Rapid thermal and integrated processing V : symposium held April 8-12, 1996, San Francisco, California, U.S.A..  pp.343-,  1996.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 429