1.

国際会議録
国際会議録
1. Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate
Gehrke, T. ; Linthicum, K. J. ; Thomson, D. B. ; Rajagopal, P. ; Batchelor, A. D. ; Davis, R. F.
出版情報: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.2.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 537
2.

国際会議録
国際会議録
2. Relaxation Phenomena in GaN/AlN/6H-SiC Heterostructures
Edwards, N. V. ; Batchelor, A. D. ; Buyanova, I. A. ; Madsen, L. D. ; Bremser, M. D. ; Davis, R. F. ; Aspnes, D. E. ; Monemar, B.
出版情報: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G3.78.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 537