1.

国際会議録
国際会議録
1. X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide
Hofstaetter,A. ; Meyer,B.K. ; Scharmann,A. ; Baranov,P.G. ; Ilyin,I.V. ; Mokhov,E.N.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.595-598,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
2.

国際会議録
国際会議録
2. Eleetron Paramaguetic Resonance of Erbium in Bulk Silicon Carbide Crystals
Baranov,P.G. ; Ilyin,I.V. ; Mokhov,E.N.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.607-610,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
3.

国際会議録
国際会議録
3. Optical absorption and Zeeman study of the 6H SiC:Cr
Dornen,A. ; Kaufmann,B. ; Baur,J. ; Kunzer,M. ; Kaufmann,U. ; Baranov,P.G.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.697-702,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
4.

国際会議録
国際会議録
4. High-frequency EPR studies of shallow and deep boron acceptors in 6H-SiC.(Invited)
Schmidt,J. ; Matsumoto,T. ; Poluektov,O.G. ; Arnold,A. ; Ikoma,T. ; Baranov,P.G. ; Mokhov,E.N.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.703-708,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
5.

国際会議録
国際会議録
5. Identification of iron transition group trace impurities in GaN bulk crystals by electron paramagnetic resonance
Baranov,P.G. ; Ilyin,I.V. ; Moknov,E.N.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1167-1172,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
6.

国際会議録
国際会議録
6. On the Identification of an Al Related Deep Centre in 4H-SiC-Self-Compensation in SiC?
Meyer,B.K. ; Hofstaetter,A. ; Baranov,P.G.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.591-594,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
7.

国際会議録
国際会議録
7. Electronic Structure of Acceptors in Silicon Carbide
Baranov,P.G.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.581-586,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
8.

国際会議録
国際会議録
8. High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC
Schmidt,J. ; Matsumoto,T.M. ; Poiuektov,O.G. ; Duijn-Arnold,A.van ; Ikoma,T. ; Baranov,P.G. ; Mokhov,E.N.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.587-590,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
9.

国際会議録
国際会議録
9. Electron paramagnetic resonance of erbium in bulk silicon carbide crystals
Baranov,P.G. ; Ilyin,I.V. ; Mokhov,E.N.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1539-1544,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263