1.

国際会議録
国際会議録
1. Influence of Free Charge on the Lattice Parameters of GaN and Other Semiconductors
Leszczynski, M. ; Bak-Misiuk, J. ; Domagala, J. ; Suski, T.
出版情報: Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.311-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 468
2.

国際会議録
国際会議録
2. X-ray Study of Strain Relaxation in Heteroepitaxial Layers of Semiconductors Annealed under High Hydrostatic Pressure
Bak-Misiuk, J.
出版情報: Frontiers of high pressure research II: application of high pressure to low-dimensional novel electronic materials.  pp.263-274,  2001.  Dordrecht.  Kluwer Academic Publishers
シリーズ名: NATO science series. Series 2, Mathematics, physics and chemistry
シリーズ巻号: 48
3.

国際会議録
国際会議録
3. Effect of High Temperature-Pressure on Strain Relaxation in Thin Layers of Semiconductors Epitaxially Grown on GaAs and Si Substrates
Bak-Misiuk, J. ; Misiuk, A. ; Adamczewska, J. ; Calamiotou, M. ; Kozanecki, A. ; Kuristyn, D. ; Reginski, K. ; Kaniewski, J. ; Georgakilas, A.
出版情報: Atomistic aspects of epitaxial growth.  pp.467-476,  2002.  Dordrecht.  Kluwer Academic Publishers
シリーズ名: NATO science series. Series 2, Mathematics, physics and chemistry
シリーズ巻号: 65
4.

国際会議録
国際会議録
4. Effect of Annealing at High Hydrostatic Pressure of Silicon Implanted with Helium and Oxygen
Misiuk, A. ; Katcki, J. ; Ratajczak, J. ; Raineri, V. ; Bak-Misiuk, J. ; Gawlik, L. ; Bryja, L. ; Jun, J.
出版情報: Atomistic aspects of epitaxial growth.  pp.457-466,  2002.  Dordrecht.  Kluwer Academic Publishers
シリーズ名: NATO science series. Series 2, Mathematics, physics and chemistry
シリーズ巻号: 65
5.

国際会議録
国際会議録
5. Defects and their electronic properties in high-pressure-annealed SOI structures sliced by hydrogen
Popov, V.P. ; Gutakovskii, A.K. ; Safronov, L.N. ; Tyschenko, I.E. ; Zhuravlev, S.K. ; Talochkin, A.B. ; Antonova, A.I. ; Naumova, O.V. ; Obodikov, V.I. ; Misiuk, A. ; Bak-Misiuk, J. ; Domagala, J. ; Romano-Rodrigues, A. ; Bachrouri, A.
出版情報: Progress in SOI structures and devices operating at extreme conditions.  pp.269-288,  2002.  Dordrecht.  Kluwer Academic Publishers
シリーズ名: NATO science series. Series 2, Mathematics, physics and chemistry
シリーズ巻号: 58
6.

国際会議録
国際会議録
6. Effect of Stress on Accumulation of Hydrogen and Microstructure of Silicon co-Implanted with Hydrogen and Helium
Misiuk, A. ; Ratajczak, J. ; Barcz, A. ; Bak-Misiuk, J. ; Shalimov, A. ; Surma, B. ; Wnuk, A. ; Jagielski, J. ; Antonova, I. V.
出版情報: Hydrogen materials science and chemistry of carbon nanomaterials.  pp.579-592,  2004.  Dordrecht.  Kluwer Academic Publishers
シリーズ名: NATO science series. Series 2, Mathematics, physics and chemistry
シリーズ巻号: 172