1.

国際会議録
国際会議録
1. On the Depth Profiling of the Traps in MOSFET's with High-k Gate Dielectrics
D. Bauza ; O. Ghobar ; B. Guillaumot
出版情報: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.219-228,  2007.  Pennington, NJ.  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 6(1)
2.

国際会議録
国際会議録
2. Low-Temperature Performance of Ultimate Si-Based MOSFETS
J. Jomaah ; G. Ghibaudo ; S. Cristoloveanu ; A. Vandooren ; F. Dieudonné ; J. Pretet ; F. Lime ; K. Oshima ; B. Guillaumot ; F. Balestra
出版情報: Low temperature electronics and low temperature cofired ceramic based electronic devices : proceedings of the seventh International Symposium on Low Temperature Electronics and the International Symposium on Low Temperature Cofired CeramicBbased Electronic Devices.  pp.118-128,  2003.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 2003-27