1.

国際会議録
国際会議録
1. THE EFFECT OF RAPID THERMAL TREATMENT ON THE STRUCTURAL OPTOELECTRONIC PROPERTIES OF EPITAXIAL GaAs ON Si GROWN WITH OR WITHOUT Ge INTERMEDIATE LAYERS
Lee, El-Hang ; Awal, Abdul M. ; Chan, E. Y. ; Opila, R. L. ; Jacobson, D. C. ; Pearton,. S. J.
出版情報: Rapid thermal processing of electronic materials : symposium held April 21-23, 1987, Anaheim California, U.S.A..  pp.347-352,  1987.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 92
2.

国際会議録
国際会議録
2. COMPARATIVE STUDIES OF THE STRUCTURAL, ELECTRICAL AND OPTOELECTRONIC PROPERTIEC OF EPITAXIAL GaAs LAYERS GROWN ON EITHER Si, Ge OR Ge COATED S1 SUBSTRATES BY MOCVD
Awal, Abdul M. ; Lee, E. H. ; Chan, E. Y. ; Lum R. M. ; Klingert, J. K. ; Sheng, T. T. ; Hopkins, L. C. ; Opila, R. L.
出版情報: Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A..  pp.241-248,  1987.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 91