1.

国際会議録
国際会議録
1. Electrical and Defect Characterization of Sputter Deposited Au and Cr Schottky Barrier Diodes on GaAs
Goodman,S.A. ; Auret,F.D. ; Clerc,Y.Le
出版情報: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1955-1960,  1995.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 196-201
2.

国際会議録
国際会議録
2. Electrical and optical characterisation of defects iuduced in epitaxially grown n-Si during 1 keV noble gas ion bombardment
Deenapanray,P.N.K. ; Auret,F.D. ; Myburg,G. ; Meyer,W.E. ; Goodman,S.A.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.565-570,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
3.

国際会議録
国際会議録
3. Electrical characterization ofelectron beam induced defects in epitaxially grown Si1-xGex
Mamor,M. ; Auret,F.D. ; Goodman,S.A. ; Myburg,G. ; Deenapanray,P.N.K. ; Meyer,W.E.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.115-120,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
4.

国際会議録
国際会議録
4. Electronic properties of defects introduced in n- and p-type Si1-xGex during ion etching
Goodman,S.A. ; Auret,F.D. ; Mamor,M. ; Deenapanray,P.N.K. ; Meyer,W.E.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.133-138,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
5.

国際会議録
国際会議録
5. Optical and Electrical Characterisation of He Plasma Sputtered n-GaAs
Murtagh,M. ; Hildebrandt,S. ; Herbert,P.A.F. ; O'Connor,G.M. ; Crean,G.M. ; Auret,F.D. ; Goodman,S.A. ; Myburg,G. ; Meyer,W.E.
出版情報: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1961-1966,  1995.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 196-201
6.

国際会議録
国際会議録
6. Defect Formation by Low Energy Ions during Sputter Deposition of TiW and Au on Epitaxially Grown n-Si at Different Plasma Pressures
Deenapanray,P.N.K. ; Auret,F.D. ; Myburg,G. ; Hayes,M. ; Meyer,W.E. ; Schutte,C.
出版情報: Materials science applications of ion beam techniques : proceedings of the International Symposium on Materials Science Applications of Ion Beam Techniques, incoeporating the 1st German-Australian Workshop on Ion Beam Analysis, Seeheim, Germany, September 9-12 1996.  pp.249-252,  1997.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 248-249
7.

国際会議録
国際会議録
7. ODMR investigation of proton irradiated GaAs
Goodrnan,S.A. ; Koschnick,F.K. ; Weber,Ch. ; Spaeth,J .-M. ; Auret,F.D.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1021-1026,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
8.

国際会議録
国際会議録
8. Electrical characterization of defects introduced during plasma-based processing of GaAs
Auret,F.D. ; Goodman,S.A. ; Myburg,G. ; Meyer,W.E. ; Deenapanray,P.N.K. ; Murtagh,M. ; Ye,S.-R. ; Masterson,H.J. ; Beechinor,J.T. ; Crean,G.M.
出版情報: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part2  pp.1045-1050,  1997.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 258-263
9.

国際会議録
国際会議録
9. Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs
Auret,F.D. ; Goodman,S.A. ; Meyer,W.E.
出版情報: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1067-1072,  1995.  Zurich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 196-201