A New Mechanism in the Growth Process of GaN by HVPE
- 著者名:
- 掲載資料名:
- GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 639
- 発行年:
- 2001
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558995499 [1558995498]
- 言語:
- 英語
- 請求記号:
- M23500/639
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Microscopic emission properties of nonpolar a-plane GaN grown by HVPE (Invited Paper) [6121-05]
SPIE - The International Society of Optical Engineering |
7
国際会議録
Polarization-Dependent Spectroscopy of the Near-Bandgap Excitonic Emission in Free Standing GaN
Materials Research Society |
MRS-Materials Research Society |
Trans Tech Publications |
3
国際会議録
High Pressure Annealing of HVPE GaN Free-Standing Films: Redistribution of Defects and Stress
Materials Research Society |
Society of Photo-optical Instrumentation Engineers |
Materials Research Society |
Society of Photo-optical Instrumentation Engineers |
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |