1.

国際会議録
国際会議録
1. Infrared spectroscopic ellipsometry for nondestructive characterization of free-carrier and crystal-structure properties of group-？-nitride semiconductor device heterostructures
Schubert,M. ; Kasic,A. ; Figge,S. ; Diesselberg,M. ; Einfeldt,S. ; Hommel,D. ; Kohler,U. ; As,D.J. ; Off,J. ; Kuhn,B. ; Scholz,F. ; Woollam,J.A. ; Herzinger,C.M.
出版情報: Optical metrology roadmap for the semiconductor, optical, and data storage industries II : 2-3 August 2001 San Diego, USA.  pp.58-68,  2001.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 4449
2.

国際会議録
国際会議録
2. Cathodoluminescence of Cubic GaN Epilayers
Wang,C. ; As,D.J. ; Schikora,D. ; Schottker,B. ; Lischka,K.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1339-1342,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
3.

国際会議録
国際会議録
3. An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN
Schottker,B. ; Kuhler,J. ; As,D.J. ; Schikora,D. ; Lischka,K.
出版情報: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.1173-1176,  1998.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 264-268
4.

国際会議録
国際会議録
4. Epitaxial growth and properties of cubic group-III nitride layers
Schikora,D. ; Schottger,B. ; As,D.J. ; Lischka,K.
出版情報: Physics and Simulation of Optoelectronic Devices V.  pp.60-81,  1997.  Bellingham, Wash..  SPIE-The International Society for Optical Engineering
シリーズ名: Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号: 2994