1.

国際会議録
国際会議録
1. Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC
Syvajarvi, M. ; Yakimova, R. ; Yazdi, G.R. ; Arjunan, A. ; Toupitsyn, E. ; Sudarshan, T.S.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.227-230,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. A Study of 6H-Seeded 4H-SiC Bulk Growth by PVT
Tupitsyn, E. Y. ; Arjunan, A. ; Bondokov, R. T. ; Kennedy, R. M. ; Sudarshan, T. S.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.21-24,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485