1.

国際会議録
国際会議録
1. Evaluation on Defects of Er and Yb Implanted Al0.70Ga0.30As by Using Positron Annihilation Spectroscopy
Arai, Tomoyuki ; Uekusa, Shin-ichiro ; Uedono, Akira
出版情報: Progress in semiconductor materials V--novel materials and electronic and optoelectronic applications : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A..  pp.179-184,  2006.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 891
2.

国際会議録
国際会議録
2. The Er3+ and Yb3+-related emission from Er,Yb co-implanted Al0.70Ga0.30As/GaAs prepared MOCVD method
Arai, Tomoyuki ; Uekusa, Shin-ichiro
出版情報: Progress in compound semiconductor materials -- electronic and optoelectronic applications.  pp.123-126,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 829
3.

国際会議録
国際会議録
3. Optical Properties of Al0.70Ga0.30As:Er,Yb
Uekusa, Shin-ichiro ; Tanaka, Isao ; Arai, Tomoyuki
出版情報: Progress in semiconductors II : electronic and optoelectronic applications : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A..  pp.525-530,  2003.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 744