1.

国際会議録
国際会議録
1. Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition
Kato, M. ; Tanaka, S. ; Ichimura, M. ; Arai, E. ; Nakamura, S. ; Kimoto, T.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.381-384,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
2.

国際会議録
国際会議録
2. Stress of ECR Plasma CVD Si3N4 Films on FZ-Si
Zaitsu, Y. ; Shimizu, T. ; Matsumoto, S. ; Yosbida, M. ; Abe, T. ; Arai, E.
出版情報: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.288-297,  1996.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 96-4
3.

国際会議録
国際会議録
3. Characterization Of Deep Levels In 3C-SiC By Optical Capacitance-Transient Spectroscopy
Nakakura, Y. ; Kato, M. ; Ichimura, M. ; Arai, E. ; Tokuda, Y.
出版情報: Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A..  pp.167-172,  2002.  Warrendale, Pa.  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 719
4.

国際会議録
国際会議録
4. Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation
Kato, M. ; Ichimura, M. ; Arai, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.933-936,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
5.

国際会議録
国際会議録
5. Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation
Kato, M. ; Ichimura, M. ; Arai, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.933-936,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
6.

国際会議録
国際会議録
6. Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution
Kato, M. ; Ichimura, M. ; Arai, E. ; Sumie, S. ; Hashizume, H.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.505-508,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
7.

国際会議録
国際会議録
7. EFFECT OF STRESS IN THE DEPOSITED SILICON NITRIDE FILMS ON BORON DIFFUSON IN SILICON
Osada, K. ; Matsumoto, S. ; Yoshida, M. ; Arai, E.
出版情報: Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.98-107,  1993.  Pennington, NJ.  Electrochemical Society
シリーズ名: Electrochemical Society Proceedings Series
シリーズ巻号: 1993-6
8.

国際会議録
国際会議録
8. Electrochemical Etching of n-Type 6H-SiC Using Aqueous KOH Solutions
Kato, M. ; Ichimura, M. ; Arai, E. ; Ramasamy, P.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.665-668,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436