Blank Cover Image

Transient Enhanced Diffusion for Ultra Low Energy Boron, Phosphorus, and Arsenic Implantation in Silicon

著者名:
掲載資料名:
Silicon front-end technology--materials processing and modelling, symposium held April 13-15, 1998, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
532
発行年:
1998
開始ページ:
35
出版情報:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994386 [1558994386]
言語:
英語
請求記号:
M23500/532
資料種別:
国際会議録

類似資料:

1 国際会議録 BORON-ENHANCED-DIFFUSION OF BORON FROM ULTRA- LOW-ENERGY BORON IMPLANTATION

Agarwal, A., Eaglesham, D.J., Gossmann, H.-J., Pelaz, L., Herner, S.B., Jacobson, D.C., Haynes, T.E., Erokhin, Yu E.

Electrochemical Society
7 国際会議録 Boron Transient-Enhanced Diffusion in Heavily Phosphorus-Doped Silicon

Huang, M. B., Myler, U., Simpson, T. W., Simpson, P. J., Mitchell, I. V.

MRS - Materials Research Society
2 国際会議録 Modeling Of Diffusion And Activation Of Low Energy Arsenic Implants In Silicon

Chakravarthi, Srinivasan, Chidambaram, P.R., Machala, Charles, Jain, Amitabh, Zhang, Xin

Materials Research Society
8 国際会議録 The Role of Vacancies and Interstitials in Transient-Enhanced Diffusion of Arsenic Implanted Into Silicon

Venables, D., Krishnamoorthy, V., Gossmann, H-J., Lilak, A., Jones, K. S., Jacobson, D. C.

MRS - Materials Research Society
3 国際会議録 Oxygen Stabilization of Damage Induced by MeV Ion Implantation

Jain, Amitabh, Mercer, Doug

MRS - Materials Research Society
9 国際会議録 59 Strain Effects on Transient Enhanced Diffusion and Deactivation of Arsenic Implanted in Silicon

Dilliway, G. D. M., Smith, A. J., Hamilton, J. J., Xu, L., McNally, P. J., Cooke, G., Kheyrandish, H., Cowern, N. E. B.

Electrochemical Society
4 国際会議録 Effects of Carbon Co-Implantation on Transient Enhanced Diffusion and Performances of the Phosphorus Doped Ultra-Shallow Junction Nano NMOSFET

Chiu, Hung Yu, Fang, Yean Kuen, Juang, Feng Renn

Trans Tech Publications
10 国際会議録 Onset of Extended Defect Formation and Enhanced Diffusion for Ultra-Low Energy Boron Implants

Liu, J., Jones, K. S., Downey, D. F., Mehta, S.

MRS - Materials Research Society
5 国際会議録 Gettering of Iron and Surface Oxygen by High-Energy Boron Ion Implantation in Silicon

Jain, A., Mercer, D. E., Yu, N., Lowell, J. K.

MRS - Materials Research Society
11 国際会議録 Temperature- and Time-Dependence of Boron-Enhanced Diffusion from Evaporated- and Ultra-Low Energy Ion-Implanted Layers

Agarwal, A., Gossmann, H-J., Eaglesham, D. J.

MRS - Materials Research Society
6 国際会議録 The Behavior of Ion Implanted Silicon During Ultra-High Temperature Annealing

Amitabh Jain

Materials Research Society
12 国際会議録 Post-Oxidation Enhanced Diffusion Of Low-Energy Implanted Boron In Ultra-Shallow P+/N Junctions Formation

Lenoble, Damien, Halimaoui, Aomar, Grouillet, Andre

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12