1.

国際会議録
国際会議録
1. DEGRADATION OF HYDROGEN-PASSIVATED p-TYPE LAYERS IN GaAs BY MINORITY CARRIER INJECTION AND REVERSE BIAS ANNEALING
Tavendale, A. J. ; Pearton, S. J. ; Williams, A. A. ; Alexiev, D.
出版情報: Degradation mechanisms in III-V compound semiconductor devices and structures : symposium held April 17-18, 1990, San Francisco, California, U.S.A..  pp.87-92,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 184
2.

国際会議録
国際会議録
2. ELECTRICAL TRANPORT STUDIES OF THE HYDROGEN-RELATED COMPENSATION DONOR IN B-DOPED SILICON DIODES
Tavendale, A.J. ; Williams, A.A. ; Alexiev, D. ; Pearton, S.J.
出版情報: Oxygen, carbon, hydrogen, and nitrogen in crystalline silicon : symposium held December 2-5, 1985, Boston, Massachusetts, U.S.A..  pp.469-474,  1986.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 59