1.

国際会議録
国際会議録
1. SiC Sublimation Growth at Small Spacing between Source and Seed
E.N. Mokhov ; A.D. Roenkov ; A.S. Segal
出版情報: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.69-72,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 740-742
2.

国際会議録
国際会議録
2. Status of 3″ 6H SiC Bulk Crystal Growth
Y.N. Makarov ; D.P. Litvin ; A.V. Vasiliev ; A.S. Segal ; S.S. Nagalyuk
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.25-28,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648
3.

国際会議録
国際会議録
3. Study of Al Incorporation in Chemical Vapor Deposition of p-Doped SiC
A.S. Segal ; S.Y. Karpov ; A.V. Lobanova ; E.V. Yakovlev ; K. Hara
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.145-148,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823