1.

国際会議録
国際会議録
1. Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC
I.P. Nikitina ; K.V. Vassilevski ; A.B. Horsfall ; N.G. Wright ; A.G. O'Neill
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.577-580,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
2.

国際会議録
国際会議録
2. Local Solid Phase Epitaxy of Few-Layer Graphene on Silicon Carbide
E. Escobedo-Cousin ; K. Vasilevskiy ; I.P. Nikitina ; N.G. Wright ; A.G. O'Neill
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.629-632,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
3.

国際会議録
国際会議録
3. High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension
K. Vassilevski ; I. Nikitina ; A. Horsfall ; N.G. Wright ; A.G. O'Neill ; K.P. Hilton ; A.G. Munday ; A.J. Hydes ; M.J. Uren ; C.M. Johnson
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.873-876,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557
4.

国際会議録
国際会議録
4. Solid Phase Growth of Graphene on Silicon Carbide by Nickel Silicidation: Graphene Formation Mechanisms
E. Escobedo-Cousin ; K. Vassilevski ; T. Hopf ; N. Wright ; A.G. O'Neill
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.1162-1165,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
5.

国際会議録
国際会議録
5. Optimizing the Vacuum Growth of Epitaxial Graphene on 6H-SiC
T. Hopf ; K. Vassilevski ; E. Escobedo-Cousin ; N. Wright ; A.G. O'Neill
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.1154-1157,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
6.

国際会議録
国際会議録
6. Silicon Carbide Static Induction Transistor with Implanted Buried Gate
K.V. Vassilevski ; I.P. Nikitina ; A.B. Horsfall ; N.G. Wright ; A.G. O'Neill
出版情報: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.735-738,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 615-617
7.

国際会議録
国際会議録
7. Characterisation of 4H-SiC MOS Capacitor with a Protective Coating for Harsh Environments Applications
S.K. Roy ; J.U. Ibanez ; A.G. O'Neill ; N.G. Wright ; A.B. Horsfall
出版情報: Silicon Carbide and Related Materials 2016.  pp.327-330,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897