1.

国際会議録
国際会議録
1. Ultra-Fast SiC Wafer Surface Roughness Mapping
Y. Nakano ; Y. Asakawa ; H. Seki ; J. Seaman ; A.A. Burk
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.489-492,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
2.

国際会議録
国際会議録
2. Basal Plane Dislocations Created in 4H-SiC Epitaxy by Implantation and Activation Anneal
R.E. Stahlbush ; N.A. Mahadik ; Q.J. Zhang ; A.A. Burk ; B.A. Hull
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.387-390,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
3.

国際会議録
国際会議録
3. Correlation of Extended Defects on Carrier Lifetime in Thick SiC Epilayers
N.A. Mahadik ; R.E. Stahlbush ; J.D. Caldwell ; M.J. O'Loughlin ; A.A. Burk
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.297-300,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
4.

国際会議録
国際会議録
4. Critical Technical Issues in High Voltage SiC Power Devices
A.K. Agarwal ; A.A. Burk ; R. Callanan ; C. Capell ; M.K. Das
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.895-900,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
5.

国際会議録
国際会議録
5. SiC Epitaxial Layer Growth in a 6x150 mm Warm-Wall Planetary Reactor
A.A. Burk ; D. Tsvetkov ; D. Barnhardt ; M.J. O'Loughlin ; L. Garrett
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.75-80,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
6.

国際会議録
国際会議録
6. SiC Epitaxial Growth on Multiple 100-mm Wafers and its Application to Power-Switching Devices
A.A. Burk ; M.J. O'Loughlin ; J.J. Sumakeris ; C. Hallin ; E. Berkman
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.77-82,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
7.

国際会議録
国際会議録
7. 4H-SiC Bipolar Junction Transistors with a Current Gain of 108
Q.J. Zhang ; C. Jonas ; A.A. Burk ; C. Capell ; J. Young
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.1159-1162,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
8.

国際会議録
国際会議録
8. High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs
L. Cheng ; S.H. Ryu ; A.K. Agarwal ; M.J. O'Loughlin ; A.A. Burk
出版情報: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.1065-1068,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 717-720
9.

国際会議録
国際会議録
9. Latest SiC Epitaxial Layer Growth Results in a High-Throughput 6×150 mm Warm-Wall Planetary Reactor
A.A. Burk ; D. Tsvetkov ; M.J. O'Loughlin ; S. Ustin ; L. Garrett
出版情報: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.113-116,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 778-780
10.

国際会議録
国際会議録
10. Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes
Q.C. Zhang ; A. Agarwal ; A.A. Burk ; M.J. O'Loughlin ; J. Palmour
出版情報: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.331-334,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 645-648