1.

国際会議録
国際会議録
1. The Electronic Structure of the UD-4 Defect in 4H, 6H and 15R SiC
A. Gällström ; B. Magnusson ; A. Thuaire ; P. PASKOV ; A. Henry
出版情報: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.397-400,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 600-603
2.

国際会議録
国際会議録
2. Coupling between the Raman Spectroscopy and Photoemission Microscopy Techniques: Investigation of Defects in Biased 4H-SiC pin Diodes
A. Thuaire ; M. Mermoux ; E. Bano ; A. Crisci ; F. Baillet ; K. Zekentes
出版情報: Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006.  pp.909-912,  2007.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 556-557