1.

国際会議録
国際会議録
1. Digital SPV Diffusion Length Metrology (E8-Fe) for Ultra-High Purity Silicon Wafers
M. Wilson ; A. Savtchouk ; I. Tasarov ; J. D'Amico ; P. Edelman
出版情報: High Purity Silicon 10.  pp.285-301,  2008.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 16(6)
2.

国際会議録
国際会議録
2. Surface Voltage and μPCD Mapping of Defect in Epitaxial SiC
M. Wilson ; A. Savtchouk ; A. Findlay ; J. Lagowski ; P. Edelman
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.353-356,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
3.

国際会議録
国際会議録
3. Accurate Doping Density Determination in SiC with Constant Surface Potential Corona Charging; Industry Ready Alternative to Hg-CV
A. Savtchouk ; M. Wilson ; J. Lagowski ; A. Czett ; C. Buday
出版情報: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.509-512,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 858
4.

国際会議録
国際会議録
4. A Novel Approach to Measuring Doping in SiC by Micro Spot Corona-Kelvin Method
D. Marinskiy ; A. Savtchouk
出版情報: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.273-276,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 821-823
5.

国際会議録
国際会議録
5. Manifestation of Cu Impurities on Silicon Surfaces, Implication for Monitoring Cu Contamination
M. Wilson ; A. Savtchouk ; J. D'Amico ; I. Tasarov ; L. Jastrzebski
出版情報: Analytical and diagnostic techniques for semiconductor materials, devices and processes 7.  pp.347-361,  2007.  Pennington, N.J..  Electrochemical Society
シリーズ名: ECS transactions
シリーズ巻号: 11(3)
6.

国際会議録
国際会議録
6. Non-Contact Photo-Assisted Charge-Based Characterization of Dielectric Interfaces in SiC: Evidence of Slow States
A. Savtchouk ; M. Wilson ; J. Lagowski
出版情報: Silicon Carbide and Related Materials 2016.  pp.139-142,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 897