MOVPE growth of AIGaN/GaN superlattices on ZnO substrates for green emitter applications
- 著者名:
- H. Yu ( Georgia Institute of Technology, United States )
- S. Wang ( Georgia Institute of Technology, United States )
- N. Li ( Georgia Institute of Technology, United States )
- W. Fenwick ( Georgia Institute of Technology, United States )
- A. Melton ( Georgia Institute of Technology, United States )
- 掲載資料名:
- Eighth International Conference on Solid State Lighting : 11-13 August 2008, San Diego, California, USA
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 7058
- 発行年:
- 2008
- 開始ページ:
- 70580V-1
- 終了ページ:
- 70580V-9
- 総ページ数:
- 9
- 出版情報:
- Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
- ISSN:
- 0277786X
- ISBN:
- 9780819472786 [0819472786]
- 言語:
- 英語
- 請求記号:
- P63600/7058
- 資料種別:
- 国際会議録
類似資料:
Materials Research Society |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
Trans Tech Publications |
Electrochemical Society |
5
国際会議録
MOCVD Growth of High Hole Concentration (>2x10¹⁹ cm⁻³) P-Type InGaN for Solar Cell Application
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
Trans Tech Publications |