The Present Status and Recent Advancements in Corona-Kelvin Non-Contact Electrical Metrology of Dielectrics for IC-Manufacturing

The Present Status and Recent Advancements in Corona-Kelvin Non-Contact Electrical Metrology of Dielectrics for IC-Manufacturing

著者名:

M. Wilson

掲載資料名:

Physics and technology of high-k gate dielectrics 4

シリーズ名:

ECS transactions

シリーズ巻号:

3(3)

発行年:

2006

開始ページ:

3

終了ページ:

24

総ページ数:

22

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775038 [1566775035]

言語:

英語

請求記号:

E23400/3-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047111
シリーズID:	PA00000034
会議名:	International Symposium on High Dielectric Constant Gate Stacks ; Meeting of the Electrochemical Society
回次:	4th ; 210th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.30-2006.11.03

類似資料:

1 国際会議録 Study of stress-induced leakage current in thin oxides stressed by corona charging in air: Relationship to GOI defects Wilson, M., Lagowski, J., Savtchou, A., Marinskiy, D., Jastrzebski, L., D'Amico, J. MRS-Materials Research Society	7 国際会議録 Digital SPV Diffusion Length Metrology (E8-Fe) for Ultra-High Purity Silicon Wafers M. Wilson, A. Savtchouk, I. Tasarov, J. D'Amico, P. Edelman Electrochemical Society
2 国際会議録 Small signal AC-surface photovoltage technique for non-contact monitoring of near surface doping and recombination-generation in the depletion layer Marinskiy, D., Lagowski, J., Wilson, M., Savtchouk, A., Jastrzebski, L., DeBusk, D. MRS-Materials Research Society	8 国際会議録 SPV Monitoring of Near Surface Doping-Role of Boron-Hydrogen Interaction; Boron Passivation and Reactivation Marinskiy, D., Lagowski, J. Materials Research Society
3 国際会議録 Small signal ac-surface photovoltage technique for noncontact monitoring of near-surface doping for IC-processing Marinskiy,D.N., Lagowski,J.J., Wilson,M., Jastrzebski,L., Santiesteban,R., Elshot,K. SPIE-The International Society for Optical Engineering	9 国際会議録 Contact potential difference methods for full wafer characterization of Si/Si02 interface defects induced by plasma processing (Invited Paper) Edelman,P., Savchouk,A., Wilson,M., Jastrzebski,L., Lagowski,J.J., Nauka,K., Ma,S., Hoff,A.M., DeBusk,D.K. SPIE-The International Society for Optical Engineering
4 国際会議録 Manifestation of Cu Impurities on Silicon Surfaces, Implication for Monitoring Cu Contamination M. Wilson, A. Savtchouk, J. D'Amico, I. Tasarov, L. Jastrzebski Electrochemical Society	10 国際会議録 A Novel Approach to Measuring Doping in SiC by Micro Spot Corona-Kelvin Method D. Marinskiy, A. Savtchouk Trans Tech Publications
5 国際会議録 Effect of Fe and Cu contamination on the reliability of ultrathin gate oxides D'Amico,J., Jastrzebski,L., Wilson,M., Savtchouk,A. SPIE - The International Society for Optical Engineering	11 国際会議録 Surface Voltage and μPCD Mapping of Defect in Epitaxial SiC M. Wilson, A. Savtchouk, A. Findlay, J. Lagowski, P. Edelman Trans Tech Publications
6 国際会議録 Non-Contact Photo-Assisted Charge-Based Characterization of Dielectric Interfaces in SiC: Evidence of Slow States A. Savtchouk, M. Wilson, J. Lagowski Trans Tech Publications	12 国際会議録 Surface Photovoltage Characterization of Low Temperature Annealed LPCVD Silicon on Glass Sen, S., Hoff, A.M., Moradi, B., Lagowski, J., Jastrzebski, L. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12