1.

国際会議録
国際会議録
1. THE EFFECT OF Xe ION BEAM TREATMENT ON THE INTERACTION BETWEEN GOLD AND GaAs
Pearton, S. J. ; Pecz, B. ; Radnoczi, G. ; Jorvath, Zs. J. ; Barna, P. B. ; Jaroli, Erika ; Gyulai, J.
出版情報: Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A..  pp.293-298,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 260
2.

国際会議録
国際会議録
2. ANISOTROPIC REACTIVE ION ETCHING OF SUBMICRON W FEATURES IN CF4 OR SF6 PLASMAS
Fullowan, T. R. ; Ren, F. ; Pearton, S. J. ; Mahoney, G. E. ; Kostelak, R. L.
出版情報: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.315-322,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 240
3.

国際会議録
国際会議録
3. DRY ETCH SELF-ALIGNED AlInAs/InGaAs HETEROJUNCTION BIPOLAR TRANSISTORS
Fullowan, T. R. ; Pearton, S. J. ; Kopf, R. F. ; Ren, F. ; Chen, Y. K. ; Smith, P. R. ; Chin, C. A. ; Lothian, J.
出版情報: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.285-292,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 240
4.

国際会議録
国際会議録
4. ELECTRON CYCLOTRON RESONANCE PLASMA PROCESSING OF GaAs-AlGaAs HEMT STRUCTURES
Pearton, S. J. ; Ren, F. ; Lothian, J. R. ; Fullowan, T. R. ; Kopf, R. F. ; Chakrabati, U. K. ; Hui, S. P. ; Emerson, A. B. ; Pei, S. S.
出版情報: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.293-300,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 240
5.

国際会議録
国際会議録
5. RAPID GROWTH KINETICS, MECHANICAL PROPERTIES AND THERMAL STABILITY OF SiOδ THIN FILMS GROWN BY RAPID THERMAL LOW PRESSURE CHEMICAL VAPOR DEPOSITION
Feingold, A. ; Katz, A. ; Pearton, S. J. ; Chakrabati, U. K. ; Jones, K. S.
出版情報: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.425-430,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 240
6.

国際会議録
国際会議録
6. *FORMATION OF OHMIC CONTACTS TO InP BY MEANS OF RAPID THERMAL LOW PRESSURE (METALORGANIC) CHEMICAL VAPOR DEPOSITION (RT-LPMOCVD) TECHNIQUE
Katz, A. ; Feingold, A. ; Pearton, S. J. ; Nakahara, S. ; Lane, E. ; Geva, M.
出版情報: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.393-408,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 240
7.

国際会議録
国際会議録
7. WET AND DRY ETCHING OF InGaP
Lothian, J. R. ; Kuo, J. M. ; Pearton, S. J. ; Ren, F.
出版情報: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.307-314,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 240
8.

国際会議録
国際会議録
8. IMPROVEMENT OF OHMIC CONTACTS ON GaAs WITH IN-SITU CLEANING
Ren, F. ; Pearton, S. J. ; Fullowan, T. R. ; Hobson, W. S. ; Chu, S. N. G. ; Emerson, A. B.
出版情報: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.417-424,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 240
9.

国際会議録
国際会議録
9. DRY ETCH DAMAGE IN GaAs P-N JUNCTIONS
Pearton, S. J. ; Abernathy, C. R.
出版情報: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.301-306,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 240
10.

国際会議録
国際会議録
10. USE OF Pt GATE METALLIZATION TO REDUCE GATE LEAKAGE CURRENT IN GaAs MESFETs
Ren, F. ; Emerson, A. B. ; Pearton, S. J. ; Hobson, W. S. ; Fullowan, T. R. ; Lothian, J.
出版情報: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.409-416,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 240