1.

国際会議録
国際会議録
1. Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters
Forsberg, U. ; Danielsson, O. ; Henry, A. ; Linnarsson, M.K. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.203-206,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
2.

国際会議録
国際会議録
2. Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth
Linnarsson, M.K. ; Forsberg, U. ; Janson, M. ; Janzen, E. ; Svensson, B.G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.565-568,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
3.

国際会議録
国際会議録
3. Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth
Linnarsson, M.K. ; Forsberg, U. ; Janson, M.S. ; Janzen, E. ; Svensson, B.G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.565-568,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
4.

国際会議録
国際会議録
4. Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters
Forsberg, U. ; Danielsson, OE. ; Henry, A. ; Linnarsson, M.K. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.203-206,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393