ELECTRONIC AND HOLE TRANSPORT PERPENDICULAR TO THE PLANES OF a-Si:H/a-Si,Ge:H COMPOSITIONAL SUPERLATTICES

ELECTRONIC AND HOLE TRANSPORT PERPENDICULAR TO THE PLANES OF a-Si:H/a-Si,Ge:H COMPOSITIONAL SUPERLATTICES

著者名:

Kolodzey, J.

掲載資料名:

Materials issues in amorphous-semiconductor technology : symposium held April 15-18, 1986, Palo Alto, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

70

発行年:

1986

開始ページ:

429

終了ページ:

434

総ページ数:

6

出版情報:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9780931837364 [0931837367]

言語:

英語

請求記号:

M23500/70

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00015556
シリーズID:	PA00000011
会議名:	Symposium on materials issues in amorphous-semiconductor technology
回次:	1986
会議開催地:	Palo Alto, CA, USA
会議開催年:	1986.04.15-1986.04.18

類似資料:

1 国際会議録 ELECTRONIC TRANSPORT AND THE DENSITY OF STATES DISTRIBUTION IN a-(Si,Ge):H,F ALLOYS Aljishi, S., Smith, Z.E., Slobodin, D., Kolodzey, J., Chu, V., Schwarz, R., Wagner, S. Materials Research Society	7 国際会議録 EFFECT OF MATERIAL PROPERTIES ON THE PERFORMANCE OF a-Si,Ge:H,F PHOTODETECTORS Shen, D.S., Conde, J.P., Chu, V., Aljishi, S., Wagner, S. Materials Research Society
2 国際会議録 ELECTRONIC TRANSPORT PROPERTIES OF a-Si:H,F/a-Si,Ge:H,F SUPERLATTICES Conde, J. P., Aljshi, S., Shen, D. S., Chu, V., Smith, Z. E., Wagner, S. Materials Research Society	8 国際会議録 THE STRUCTURE OF a-Si:H, F/a-Si,Ge:H, F INTERFACES Conde, J.P., Shen, D.-S., Campbell, I.H., Fauchet, P.M., Wagner, S. Materials Research Society
3 国際会議録 MEASUREMENTS OF LIGHT-INDUCED DEGRADATION IN a-Si, Ge:H,F ALLOYS Kolodzey, J., Aljishi, S., Smith, Z E, Chu, V., Schwartz, R., Wagner, S. Materials Research Society	9 国際会議録 LIGHT-INDUCED DEFECTS IN MEDIUM AND LOW GAP a-Si,Ge:H,F ALLOYS Chu, V., Conde, J.P., Shen, D.S., Aljishi, S., Wagner, S. Materials Research Society
4 国際会議録 FLOURINE INCORPORATION AND ANNEALING PROPERTIES OF a-Si,Ge:H,F ALLOYS STUDIED BY ELASTIC PROTON SCATTERING AND IR ABSORPTION Schwarz, R., Okada, Y., Chou, S.F., Kolodzey, J., Slobodin, D., Wagner S. Materials Research Society	10 国際会議録 A NEW MATERIAL: a-Si,Ge:H,F IN a-Si,Ge:H,F/a-Si:H,F MULTILAYER STRUCTURES Conde, J.P., Chu, V., Shen, D.S., Angell, M., Wagner, S. Materials Research Society
5 国際会議録 *THE OPTOELECTRONIC PROPERTIES OF a-Si,Ge:H(F) ALLOYS Wagner, S., Chu, V., Shen, D.S., Conde, J.P., Aljishi, S., Smith, Z.E. Materials Research Society	11 国際会議録 SCHOTTKY BARRIERS ON A_Si:H,F/a-Si, Ge,:H, F SUPERLATTICES Chu, V., Conde, J. P., Aljishi, S., Shen, D. S., Smith, Z. E., Wagner, S. Materials Research Society
6 国際会議録 RECOMBINATION AND ELECTRONIC TRANSPORT IN LOW-GAP a-Si,Ge:H,F ALLOYS Aljshi, S., Shen, D. S., Chu, V., Smith, Z. E., Conde, J. P., Kolodsey, J., Slobodin, D., Wagner, S. Materials Research Society	12 国際会議録 DEPOSITION OF a-Ge:H BY GeF4/H2 GLOW DISCHARGE Slobodin, D., Aljishi, S., Wagner, S. Materials Research Society

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