1.

国際会議録
国際会議録
1. The Carbon Vacancy Pair in 4H and 6H SiC
Son, N. T. ; Hai, P. N. ; Shuja, A. ; Chen, W. M. ; Lindstrom, J. L. ; Monemar, A. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.821-824,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
2.

国際会議録
国際会議録
2. Electroluminescence from Implanted and Epitaxially Grown pn-Diodes
Carlsson, F. H. C. ; Storasta, L. ; Hemmingsson, C. ; Bergman, J. P. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.687-690,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
3.

国際会議録
国際会議録
3. Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance
Son, N. T. ; Hai, P. N. ; Chen, W. M. ; Hallin, C. ; Monemar, B. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.5663-566,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
4.

国際会議録
国際会議録
4. Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
Ellison, A. ; Zhang, J. ; Magnusson, W. ; Henry, A. ; Wahab, Q. ; Bergman, J. P. ; Hemmingsson, C. ; Son, N. T. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.131-136,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
5.

国際会議録
国際会議録
5. Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations
Meyer, B. K. ; Hofmann, D. M. ; Volm, D. ; Chen, W. M. ; Son, N. T. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.559-562,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
6.

国際会議録
国際会議録
6. High Growth Rate Epitaxy of Thick 4H-SiC Layers
Syvajarvi, M. ; Yakimova, R. ; Jacobsson, H. ; Linnarsson, M. K. ; Henry, A. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.165-168,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
7.

国際会議録
国際会議録
7. Vacancies and Their Complexes with H in SiC
Deak, P. ; Gali, A. ; Aradi, B. ; Son, N. T. ; Janzen, E. ; Choyke, W. J.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.817-820,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
8.

国際会議録
国際会議録
8. Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky Diodes
Wahab, Q. ; Ellison, A. ; Hallin, C. ; Henry, A. ; Persio, J. Di ; Martinez, R. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1175-1178,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
9.

国際会議録
国際会議録
9. Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films
Wahab, Q. ; Ellison, A. ; Zhang, J. ; Forsberg, U. ; Duranova, E. ; Henry, A. ; Madsen, L. D. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1171-1174,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
10.

国際会議録
国際会議録
10. Time-Resolved Photoluminescence Study of Bound and Free Excitons in 4H SiC
Pozina, G. ; Bergman, J. P. ; Hemmingsson, A. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.675-678,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)