1.

国際会議録
国際会議録
1. Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing
Chung, H.J. ; Liu, J.-Q. ; Henry, A. ; Skowronski, M.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.253-256,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
2.

国際会議録
国際会議録
2. Doping-Related Strain in n-Doped 4H-SiC Crystals
Jacobson, H. ; Birch, J. ; Lindefelt, U. ; Hallin, C. ; Henry, A. ; Yakimova, R. ; Janzen, E.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.269-272,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
3.

国際会議録
国際会議録
3. Infrared Optical Properties of 3C, 4H and 6H Silicon Carbide
Lindquist, O.P.A. ; Arwin, H. ; Henry, A. ; Jarrendahl, K.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.329-332,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
4.

国際会議録
国際会議録
4. Correlation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiC
Storasta, L. ; Magnusson, B. ; Henry, A. ; Linnarsson, M.K. ; Bergman, J.P. ; Janzen, E.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.423-426,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
5.

国際会議録
国際会議録
5. Nitrogen Delta Doping in 4H-SiC Epilayers
Henry, A. ; Storasta, L. ; Janzen, E.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.153-156,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
6.

国際会議録
国際会議録
6. A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates
Eriksson, J. ; Rorsman, N. ; Zirath, H. ; Henry, A. ; Magnusson, B. ; Ellison, A. ; Janzen, E.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.737-740,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
7.

国際会議録
国際会議録
7. Growth of High Quality p-Type 4H-SiC Substrates by HTCVD
Sundqvist, B. ; Ellison, A. ; Jonsson, A. ; Henry, A. ; Hallin, C. ; Bergman, J.P. ; Magnusson, B. ; Janzen, E.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.21-24,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436