1.

国際会議録
国際会議録
1. Selective Epitaxial Growth of3C-SiC on Si Using Hexamethyldisilane in a Resistance Heated MOCVD Reactor
Gupta, A. ; Jacob, C.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.303-306,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. Characterization of SiC Substrates Using X-Ray Rocking Curve Mapping
Yoganathan, M. ; Emorhokpor, E. ; Kerr, T. ; Gupta, A. ; Tanner, C.D. ; Zwieback, I.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.729-732,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
3.

国際会議録
国際会議録
3. Growth and Characterization of Large Diameter 6H and 4H SiC Single Crystals
Gupta, A. ; Semenas, E. ; Emorhokpor, E. ; Chen, I. ; Zwieback, I. ; Souzis, A.E. ; Anderson, T.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.43-46,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
4.

国際会議録
国際会議録
4. A Simple Method to Synthesize Nano-Sized 3C-SiC Powder Using Hexamethyldisilane in a CVD Reactor
Gupta, A. ; Jacob, C.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.767-770,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529