1.

国際会議録
国際会議録
1. In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC Substrates
Linnarsson, M.K. ; Janson, M.S. ; Forsberg, U. ; Janzen, E.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.637-640,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
2.

国際会議録
国際会議録
2. Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4E-SiC
Umeda, T. ; Son, N.T. ; Isoya, J. ; Morishita, N. ; Ohshima, T. ; Itoh, H. ; Janzen, E.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.543-546,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
3.

国際会議録
国際会議録
3. Signature of the-Negative Carbon Vacancy-Antisite Complex
Bockstedte, M. ; Gali, A. ; Umeda, T. ; Son, N.T. ; Isoya, J. ; Janzen, E.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.539-542,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
4.

国際会議録
国際会議録
4. Divacancy and Its Identification: Theory
Gali, A. ; Bockstedte, M. ; Son, N.T. ; Umeda, T. ; Isoya, J. ; Janzen, E.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.523-526,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
5.

国際会議録
国際会議録
5. Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC
Son, N.T. ; Umeda, T. ; Isoya, J. ; Gali, A. ; Bockstedte, M. ; Magnusson, B. ; Ellison, A. ; Morishita, N. ; Ohshima, T. ; Itoh, H. ; Janzen, E.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.527-530,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
6.

国際会議録
国際会議録
6. Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy
Aavikko, R. ; Saarinen, K. ; Magnusson, B. ; Janzen, E.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.575-578,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
7.

国際会議録
国際会議録
7. Shallow P Donors in 3C-, 4H- and 6H-SiC
Isoya, J. ; Katagiri, M. ; Umeda, T. ; Son, N.T. ; Henry, A. ; Gali, A. ; Morishita, N. ; Ohshima, T. ; Itoh, H. ; Janzen, E.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.593-596,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
8.

国際会議録
国際会議録
8. Photoluminescence of Phosphorus Doped SiC
Henry, A. ; Janzen, E.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.589-592,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
9.

国際会議録
国際会議録
9. Donor-Acceptor pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC
Ivanov, I.G. ; Henry, A. ; Janzen, E.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.601-604,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
10.

国際会議録
国際会議録
10. Optical Studies of Deep Centers in Semi-Insulating SiC
Magnusson, B. ; Aavikko, R. ; Saarinen, K. ; Son, N.T. ; Janzen, E.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.455-460,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
11.

国際会議録
国際会議録
11. Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
Thuaire, A. ; Henry, A. ; Magnusson, B. ; Bergman, J.P. ; Chen, W.M. ; Janzen, E. ; Mermoux, M. ; Bano, E.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.461-464,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
12.

国際会議録
国際会議録
12. Epitaxial Growth and Characterization of Phosphorus Doped SiC Using TBP as Precursor
Henry, A. ; Janzen, E.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.101-104,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
13.

国際会議録
国際会議録
13. Hyperfine Interaction of Nitrogen Donor in 4H-SiC Studied by Pulsed-ENDOR
Son, N. T. ; Isoya, J. ; Yamasaki, S. ; Janzen, E.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.351-354,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
14.

国際会議録
国際会議録
14. Recombination Enhanced Defect Annealing in 4H-SiC
Storasta, L. ; Carlsson, F. H. C. ; Bergman, J. P. ; Janzen, E.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.369-372,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
15.

国際会議録
国際会議録
15. Optical Characterization of Deep Level Defects in SiC
Magnusson, B. ; Janzen, E.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.341-346,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
16.

国際会議録
国際会議録
16. SiC and III-Nitride Growth in Hot-Wall CVD Reactor
Janzen, E. ; Bergman, J. P. ; Danielsson, O. ; Forsberg, U. ; Hallin, C. ; Hassan, J. ul ; Henry, A. ; Ivanov, I. G. ; Kakanakova-Georgieva, A. ; Persson, P. ; Wahab, Q. ul
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.61-66,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
17.

国際会議録
国際会議録
17. Electron Paramagnetic Resonance of Shallow Phosphorous Centers in 4H- and 6H-SiC
Son, N. T. ; Henry, A. ; Isoya, J. ; Janzen, E.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.515-518,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
18.

国際会議録
国際会議録
18. Effective-Mass Theoty of Shallow Donors in 4H-SiC
Ivanov, I. G. ; Stelmach, A. ; Kleverman, M. ; Janzen, E.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.511-514,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
19.

国際会議録
国際会議録
19. Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects
Gali, A. ; Hornos, T. ; Deak, P. ; Son, N. T. ; Janzen, E. ; Choyke, W. J.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.519-522,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
20.

国際会議録
国際会議録
20. Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates
ul Hassan, J. ; Hallin, C. ; Bergman, J.P. ; Janzen, E.
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.183-186,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
21.

国際会議録
国際会議録
21. Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
Sumakeris, J.J. ; Bergman, J.P. ; Das, M.K. ; Hallin, C. ; Hull, B.A. ; Janzen, E. ; Lendenmann, H. ; O'Loughlin, M.J. ; Paisley, M.J. ; Ha, S. ; Skowronski, M. ; Palmour, J.W. ; Carter, C.H.,Jr
出版情報: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.141-146,  2006.  Stafa-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 527-529
22.

国際会議録
国際会議録
22. The Carbon Vacancy Pair in 4H and 6H SiC
Son, N. T. ; Hai, P. N. ; Shuja, A. ; Chen, W. M. ; Lindstrom, J. L. ; Monemar, A. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.821-824,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
23.

国際会議録
国際会議録
23. Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding Energy
Ivanov, I.G. ; Zhang, J. ; Storasta, L. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.613-616,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
24.

国際会議録
国際会議録
24. Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors
Danielsson, E. ; Zetterling, C.-M. ; Ostling, M. ; Forsberg, U. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1337-1340,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
25.

国際会議録
国際会議録
25. Structural Defects in Electrically Degraded 4H-SiC PiN Diodes
Persson, P.O.A. ; Jacobson, H. ; Molina-Aldareguia, J.M. ; Bergman, J.P. ; Tuomi, T. ; Clegg, W.J. ; Janzen, E. ; Hultman, L.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.423-426,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
26.

国際会議録
国際会議録
26. Behavior of Micropipes during Growth in 4H-SiC
Vouroutzis, N. ; Yakimova, R. ; Syvaejaervi, M. ; Jacobson, H. ; Stoemenos, J. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.395-398,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
27.

国際会議録
国際会議録
27. Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC
Kassamakova, L. ; Kakanakov, R. ; Yakimova, R. ; Kakanakova-Georgieva, A. ; Syvaejaervi, M. ; Wilzen, L. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.929-932,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
28.

国際会議録
国際会議録
28. Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing
Wahab, Q.u. ; Macak, E.B. ; Zhang, J. ; Madsen, L.D. ; Janzen, E.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.691-694,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
29.

国際会議録
国際会議録
29. Power Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe Density
Syrkin, A. ; Dmitriev, V. ; Yakimova, R. ; Henry, A. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1173-1176,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
30.

国際会議録
国際会議録
30. Intrinsic Photoconductivity of 6H-SiC and the Free-Exciton Binding Energy
Ivanov, I.G. ; Egilsson, T. ; Zhang, J. ; Ellison, A. ; Janzen, E.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.405-408,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
31.

国際会議録
国際会議録
31. Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors
Koo, S.-M. ; Lee, S.-K. ; Zetterling, C.-M. ; Ostling, M. ; Forsberg, U. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1235-1238,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
32.

国際会議録
国際会議録
32. Intrinsic Defects in Silicon Carbide Polytypes
Son, N.T. ; Hai, P.N. ; Janzen, E.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.499-504,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
33.

国際会議録
国際会議録
33. Proton Irradiation Induced Defects in 4H-SiC
Storasta, L. ; Carlsson, F.H.C. ; Sridhara, S.G. ; Aberg, D. ; Bergman, J.P. ; Hallen, A. ; Janzen, E.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.431-434,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
34.

国際会議録
国際会議録
34. Electroluminescence from Implanted and Epitaxially Grown pn-Diodes
Carlsson, F. H. C. ; Storasta, L. ; Hemmingsson, C. ; Bergman, J. P. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.687-690,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
35.

国際会議録
国際会議録
35. Characterization and Comparison of 4H-SiC(1120) and 4H-SiC(0001)8° Off-Axis Substrates and Homoepitaxial Films
Bishop, S.M. ; Preble, E.A. ; Hallin, C. ; Henry, A. ; Sarney, W. ; Chang, H.-R. ; Storasta, L. ; Jacobson, H. ; Reitmeier, Z.J. ; Wagner, B.P. ; Janzen, E. ; Davis, R.F.
出版情報: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.53-58,  2004.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 815
36.

国際会議録
国際会議録
36. Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance
Son, N. T. ; Hai, P. N. ; Chen, W. M. ; Hallin, C. ; Monemar, B. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.5663-566,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
37.

国際会議録
国際会議録
37. Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
Ellison, A. ; Zhang, J. ; Magnusson, W. ; Henry, A. ; Wahab, Q. ; Bergman, J. P. ; Hemmingsson, C. ; Son, N. T. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.131-136,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
38.

国際会議録
国際会議録
38. Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations
Meyer, B. K. ; Hofmann, D. M. ; Volm, D. ; Chen, W. M. ; Son, N. T. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.559-562,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
39.

国際会議録
国際会議録
39. High Growth Rate Epitaxy of Thick 4H-SiC Layers
Syvajarvi, M. ; Yakimova, R. ; Jacobsson, H. ; Linnarsson, M. K. ; Henry, A. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.165-168,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
40.

国際会議録
国際会議録
40. Vacancies and Their Complexes with H in SiC
Deak, P. ; Gali, A. ; Aradi, B. ; Son, N. T. ; Janzen, E. ; Choyke, W. J.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.817-820,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
41.

国際会議録
国際会議録
41. Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky Diodes
Wahab, Q. ; Ellison, A. ; Hallin, C. ; Henry, A. ; Persio, J. Di ; Martinez, R. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1175-1178,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
42.

国際会議録
国際会議録
42. Defect Energetics in 4H-SiC Sublimation Epi-Layers Grown on LPE Buffers With Reduced Micropipe Density
Yakimova, R. ; Syvaejaervi, M. ; Jacobsson, H. ; Kakanakova-Georgieva, A. ; Tuomi, T. ; Rendakova, S. ; Dmitriev, V. ; Janzen, E.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640
43.

国際会議録
国際会議録
43. Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films
Wahab, Q. ; Ellison, A. ; Zhang, J. ; Forsberg, U. ; Duranova, E. ; Henry, A. ; Madsen, L. D. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1171-1174,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(2)
44.

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国際会議録
44. HTCVD Growth of Semi-Insulating 4H-SiC Crystals With Low Defect Density
Ellison, A. ; Magnusson, B. ; Hemmingsson, C. ; Magnusson, W. ; Iakimov, T. ; Storasta, L. ; Anne, H. ; Henelius, N. ; Janzen, E.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640
45.

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国際会議録
45. Deep-Level Luminescence at 1.0 eV in 6H SiC
Magnusson, B. ; Ellison, A. ; Son, N.T. ; Janzen, E.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640
46.

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国際会議録
46. Electroluminescence from 4H-SiC Schottky Diodes
Carlsson, F.H.C. ; ul-Wahab, Q. ; Bergman, P.J. ; Janzen, E.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640
47.

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国際会議録
47. Growth and Characterization of 4H-SiC MESFET Structures Grown by Hot-Wall CVD
Forsberg, U. ; Henry, A. ; Danielsson, Oe. ; Rorsman, N. ; Eriksson, J. ; Wahab, Q. ; Storasta, L. ; Linnarsson, M.K. ; Janzen, E.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640
48.

国際会議録
国際会議録
48. Time-Resolved Photoluminescence Study of Bound and Free Excitons in 4H SiC
Pozina, G. ; Bergman, J. P. ; Hemmingsson, A. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.675-678,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
49.

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国際会議録
49. Vanadium-Related Center in 4H Silicon Carbide
Magnusson, B. ; Wagner, Mt. ; Son, N. T. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.631-634,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
50.

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国際会議録
50. Photoluminescence Study of CVD Layers Highly Doped with Nitrogen
Forsberg, U. ; Henry, A. ; Linnarsson, M. K. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.619-622,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
51.

国際会議録
国際会議録
51. Metastability of a Hydrogen-Related Defect in 6H-SiC
Henry, A. ; Egilsson, T. ; Ivanov, I. G. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.651-654,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
52.

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国際会議録
52. Pseudo-Donors in SiC
Egilsson, T. ; Ivanov, I. G. ; Henry, A. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.647-650,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
53.

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国際会議録
53. Considerations on the Crystal Morphology in the Sublimation Growth of SiC
Raback, P. ; Yakimova, R. ; Syvajarvi, M. ; Iakimov, T. ; Nieminen, R. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.95-98,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
54.

国際会議録
国際会議録
54. Micropipe Healing in Liquid Phase Epitaxial Growth of SiC
Yakimova, R. ; Syvajarvi, M. ; Rendakova, S. ; Dmitriev, V. ; Henry, A. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.237-240,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
55.

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国際会議録
55. Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals
Storasta, L. ; Aleksiejunas, R. ; Sudzius, M. ; Kadys, A. ; Malinauskas, T. ; Jarasiunas, K. ; Magnusson, B. ; Janzen, E.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.409-412,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
56.

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国際会議録
56. Morphology Control for Growth of Thick Epitaxial 4H SiC Layers
Zhang, J. ; Ellison, A. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.137-140,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
57.

国際会議録
国際会議録
57. Photoluminescence Excitation Spectroscopy on the Donor-Acceptor Pair Luminescence in 4H and 6H SiC
Ivanov, I.G. ; Janzen, E.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.585-588,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
58.

国際会議録
国際会議録
58. Characterisation and Defects in Silicon Carbide
Bergman, J.P. ; Jakobsson, H. ; Storasta, L. ; Carlsson, F.H.C. ; Magnusson, B. ; Sridhara, S.G. ; Pozina, G. ; Lendenmann, H. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.9-14,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
59.

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国際会議録
59. Lateral Enlargement of Silicon Carbide Crystals
Jacobson, H. ; Yakimova, R. ; Raback, P. ; Syvajarvi, M. ; Birch, J. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.39-42,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
60.

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国際会議録
60. Neutron Irradiation of 4H SiC
Carlsson, F.H.C. ; Storasta, L. ; Magnusson, B. ; Bergman, J.P. ; Skoeld, K. ; Janzen, E.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.555-558,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
61.

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国際会議録
61. Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters
Forsberg, U. ; Danielsson, O. ; Henry, A. ; Linnarsson, M.K. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.203-206,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
62.

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国際会議録
62. In Situ Etching of 4H-SiC in H2 with Addition of HCl for Epitaxial CVD Growth
Zhang, J. ; Kordina, O. ; Ellison, A. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.239-242,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
63.

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国際会議録
63. Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor Deposition
Danielsson, O. ; Jonsson, S. ; Henry, A. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.219-222,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
64.

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国際会議録
64. Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation
Zhang, J. ; Forsberg, U. ; Isacson, M. ; Ellison, A. ; Henry, A. ; Kordina, O. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.191-194,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
65.

国際会議録
国際会議録
65. Temperature-Dependent Hall Effect Measurements in Low ? Compensated p-Type 4H-SiC
Kasamakova-Kolaklieva, L. ; Storasta, L. ; Ivanov, I.G. ; Magnusson, B. ; Contreras, S. ; Consejo, C. ; Pernot, J. ; Zielinski, M. ; Janzen, E.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.677-680,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
66.

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国際会議録
66. Electrical Activity of Residual Boron in Silicon Carbide
Storasta, L. ; Bergman, J.P. ; Hallin, C. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.549-552,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
67.

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国際会議録
67. Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC
Kassamakova, L. ; Kakanakov, R. ; Yakimova, R. ; Kakanakova-Georgieva, A. ; Syvajarvi, M. ; Wilzen, L. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.929-932,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
68.

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国際会議録
68. Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes
Jacobson, H. ; Bergman, J.P. ; Hallin, C. ; Tuomi, T. ; Janzen, E.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.913-916,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
69.

国際会議録
国際会議録
69. Electronic Structure of the UD3 Defect in 4H- and 6H-SiC
Wagner, Mt. ; Magnusson, B. ; Chen, W.M. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.509-512,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
70.

国際会議録
国際会議録
70. Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth
Linnarsson, M.K. ; Forsberg, U. ; Janson, M. ; Janzen, E. ; Svensson, B.G.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.565-568,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
71.

国際会議録
国際会議録
71. Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy
Henry, A. ; Ellison, A. ; Forsberg, U. ; Magnusson, B. ; Pozina, G. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.593-596,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
72.

国際会議録
国際会議録
72. Properties of the UD-1 Deep-Level Center in 4H-SiC
Magnusson, B. ; Ellison, A. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.505-508,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
73.

国際会議録
国際会議録
73. Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC
Aradi, B. ; Gali, A. ; Deak, P. ; Son, N.T. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.561-564,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
74.

国際会議録
国際会議録
74. The Neutral Silicon Vacancy in SiC: Ligand Hyperfine Interaction
Wagner, Mt. ; Thinh, N.Q. ; Son, N.T. ; Baranov, P.G. ; Mokhov, E.N. ; Hallin, C. ; Chen, W.M. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.501-504,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
75.

国際会議録
国際会議録
75. Hole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron Resonance
Son, N.T. ; Hallin, C. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.525-528,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
76.

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国際会議録
76. Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors
Danielsson, E. ; Zetterling, C.-M. ; OEstling, M. ; Forsberg, U. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1337-1340,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
77.

国際会議録
国際会議録
77. Defects in High-Purity Semi-Insulating SiC
Son, N.T. ; Magnusson, B. ; Zolnai, Z. ; Ellison, A. ; Janzen, E.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.437-442,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
78.

国際会議録
国際会議録
78. Investigations of Possible Nitrogen Participation in the Z1/Z2 Defect in 4H-SiC
Storasta, L. ; Henry, A. ; Bergman, J.P. ; Janzen, E.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.469-472,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
79.

国際会議録
国際会議録
79. Growth of AlN Films by Hot-Wall CVD and Sublimation Techniques: Effect of Growth Cell Pressure
Kakanakova-Georgieva, A. ; Forsberg, U. ; Magnusson, B. ; Yakimova, R. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1469-1472,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
80.

国際会議録
国際会議録
80. Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC
Gali, A. ; Deak, P. ; Rauls, E. ; Ordejon, P. ; Carlsson, F.H.C. ; Ivanov, I.G. ; Son, N.T. ; Janzen, E. ; Choyke, W.J.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.443-448,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
81.

国際会議録
国際会議録
81. Simulation and Measurement of Switching Characteristics of 4H-SiC Buried-Gate JFETs
Koo, S.-M. ; Domeij, M. ; Zetterling, C.-M. ; Ostling, M. ; Forsberg, U. ; Janzen, E.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.773-776,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
82.

国際会議録
国際会議録
82. Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC
Zolnai, Z. ; Son, N.T. ; Magnusson, B. ; Hallin, C. ; Janzen, E.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.473-476,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
83.

国際会議録
国際会議録
83. Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature Conditions
Nakagomi, S. ; Shinobu, H. ; Uneus, L. ; Lundstrom, I. ; Ekedahl, L.-G. ; Yakimova, R. ; Syvaejaervi, M. ; Henry, A. ; Janzen, E. ; Spetz, A. L.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1423-1426,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
84.

国際会議録
国際会議録
84. High-Resolution XRD Evaluation of Thick 4H-SiC Epitaxial Layers
Jacobsson, Henrik ; Yakimova, R. ; Syvaejaervi, M. ; Birch, J. ; Tuomi, T. ; Janzen, E.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.291-294,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
85.

国際会議録
国際会議録
85. As-Grown and Process-Induced Intrinsic Deep-Level Luminescence in 4H-SiC
Magnusson, B. ; Ellison, A. ; Carlsson, F.H.C. ; Son, N.T. ; Janzen, E.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.365-368,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
86.

国際会議録
国際会議録
86. Presence of Hydrogen in SiC
Henry, A. ; Magnusson, B. ; Linnarsson, M.K. ; Ellison, A. ; Syvaejaervi, M. ; Yakimova, R. ; Janzen, E.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.373-376,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
87.

国際会議録
国際会議録
87. The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures
Uneus, L. ; Nakagomi, S. ; Linnarsson, M. ; Janson, M.S. ; Svensson, B.G. ; Yakimova, R. ; Syvaejaervi, M. ; Henry, A. ; Janzen, E. ; Ekedahl, L.-G. ; Lundstrom, I. ; Spetz, A. L.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1419-1422,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
88.

国際会議録
国際会議録
88. Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC
Sridhara, S.G. ; Carlsson, F.H.C. ; Bergman, J.P. ; Henry, A. ; Janzen, E.
出版情報: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.377-380,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 353-356
89.

国際会議録
国際会議録
89. Properties of the Bound Excitons Associated to the 3838A Line in 4H-SiC and the 4182A Line in 6H-SiC
Henry, A. ; Janson, M.S. ; Janzen, E.
出版情報: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.549-554,  2004.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 457-460
90.

国際会議録
国際会議録
90. Implementation of Hot-Wall MOCVD to the Growth of High-Quality GaN on SiC
Kakanakova-Georgieva, A. ; Forsberg, U. ; Hallin, C. ; Persson, P.O.A. ; Storasta, L. ; Pozina, G. ; Birch, J. ; Hultman, L. ; Janzen, E.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.991-994,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
91.

国際会議録
国際会議録
91. Characterization of Anisotropic Step-Bunching on As-Grown SiC Surfaces
Syvajarvi, M. ; Yakimova, R. ; Iakimov, T. ; Janzen, E.
出版情報: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.375-378,  2000.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 338-342(1)
92.

国際会議録
国際会議録
92. Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers
Yakimova, R. ; Jacobson, H. ; Syvajarvi, M. ; Kakanakova-Georgieva, A. ; Iakimov, T. ; Virojanadara, C. ; Johansson, L.I. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.283-286,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
93.

国際会議録
国際会議録
93. Observation of Vacancy Clusters in HTCVD Grown SiC
Aavikko, R. ; Saarinen, K. ; Magnusson, B. ; Janzen, E.
出版情報: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.469-472,  2005.  Uetikon-Zuerich.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 483-485
94.

国際会議録
国際会議録
94. Characterisation and Defects in Silicon Carbide
Bergman, J.P. ; Jakobsson, H. ; Storasta, L. ; Carlsson, F.H.C. ; Magnusson, B. ; Sridhara, S. ; Pozina, G. ; Lendenmann, H. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.9-14,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
95.

国際会議録
国際会議録
95. Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature Techniques
Kakanakova-Georgieva, A. ; Yakimova, R. ; Zhang, J. ; Storasta, L. ; Syvajarvi, M. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.259-262,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
96.

国際会議録
国際会議録
96. Electron Irradiation of 4H SiC by TEM: An Optical Study
Sridhara, S.G. ; Persson, P.O.Å. ; Carlsson, F.H.C. ; Bergman, J.P. ; Janzen, E. ; Evans, G. ; Steeds, J.W.
出版情報: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 640
97.

国際会議録
国際会議録
97. Growth of AlN Films by Hot-Wall CVD and Sublimation Techniques: Effect of Growth Cell Pressure
Kakanakova-Georgieva, A. ; Forsberg, U. ; Magnusson, B. ; Yakimova, R. ; Janzen, E.
出版情報: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1469-1472,  2002.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 389-393
98.

国際会議録
国際会議録
98. Calculation of Hyperfine Constants of Defects in 4H-SiC
Gali, A. ; Deak, P. ; Son, N.T. ; Janzen, E. ; von Bardeleben, H.J. ; Monge, J.-L.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.511-514,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
99.

国際会議録
国際会議録
99. Doping-Related Strain in n-Doped 4H-SiC Crystals
Jacobson, H. ; Birch, J. ; Lindefelt, U. ; Hallin, C. ; Henry, A. ; Yakimova, R. ; Janzen, E.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.269-272,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436
100.

国際会議録
国際会議録
100. Orientation-Dependent Defect Formation in Silicon Carbide Epitaxial Layers
Yakimova, R. ; Syvajarvi, M. ; Iakimov, T. ; Okunev, A.O. ; Udal'tsov, V.E. ; Janzen, E.
出版情報: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.281-284,  2003.  Zuerich, Switzerland.  Trans Tech Publications
シリーズ名: Materials science forum
シリーズ巻号: 433-436