1.

国際会議録
国際会議録
1. USE OF VALVED, SOLID GROUP V SOURCES FOR THE GROWTH OF GaAs/GaInP HETEROSTRUCTURES BY MOLECULAR BEAM EPITAXY
Johnson, F.G. ; Wicks, G.W. ; Viturro, R.E. ; LaForce, R.
出版情報: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.49-54,  1993.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 281
2.

国際会議録
国際会議録
2. InP LAYERS GROWN BY MOLECULAR BEAM EPITAXY AT LOW SUBSTRATE TEMPERATURE
Xie, K. ; Wie, C.R. ; Wicks, G.W.
出版情報: Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A..  pp.265-270,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 241