1.

国際会議録
国際会議録
1. IN-SITU CHARACTERIZATION OF THIN POLYCRYSTALLINE DIAMOND FILM QUALITY BY THERMAL WAVE AND RAMAN TECHNIQUES
Pryor, R.W. ; Kuo, P.K. ; Wei, L. ; Thomas, R.L. ; Talley, P.L.
出版情報: Diamond, silicon carbide, and related wide bandgap semiconductors : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.273-278,  1990.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 162
2.

国際会議録
国際会議録
2. THE LACK OF TRAPPING CENTERS FOR POSITRONS AT THE INTERFACE OF W/Si SYSTEM AND THE INVESTIGATION OF THE DEPLETON LAYER IN THE SCHOTTKY BARRIER BY POSITIONS AS TEST CHARGE SIMULATING HOLES
Tanigawa, S. ; Tabuki, Y. ; Wei, L. ; Hinode, K. ; Kobayashi, N. ; Onail, T. ; Owada, N.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.307-312,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
3.

国際会議録
国際会議録
3. DEFECT ANNIHILATION IN CZOCHRALSKI-GROWN SILICON DURING OUT-DIFFUSION PROCESS PROBED WITH VARIABLE-ENERGY POSITRON BEAM
Kitano, T. ; Wei, L. ; Tabuki, Y. ; Tanigawa, S. ; Mikoshiba, H.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.707-712,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
4.

国際会議録
国際会議録
4. DEFECT FORMATION BY ION IMPLANTATION IN Cz-Si STUDIED BY A MONOENERGETIC POSITRON BEAM
Uedeno, A. ; Ujihira, Y. ; Wei, L. ; Tabuki, Y ; Tanigawa, S. ; Sugiura, J. ; Ogasawara, M. ; Tamura, M,
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.1061-1066,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
5.

国際会議録
国際会議録
5. EVALUATION OF VACANCY-TYPE DEFECTS IN SIMOX SUBSTRATES BY A SLOW POSITION BEAM AND A PULSED POSITRON BEAM
Kametani, H. ; Akiyama, H. ; Yamaguchi, Y. ; Koumaru, M, ; Wei, L. ; Tabuki, Y. ; Tanigawa, S. ; Uedono, A. ; Watauchi, S. ; Ujihira, Y. ; Suzuki, R. ; Ohgaki, H. ; Mikado, T.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.235-240,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
6.

国際会議録
国際会議録
6. CHARACTERIZATION OF DEFECTS IN HEAVILY Si-DOPED GaAs BY A MONOENERGETIC POSITRON BEAM
Uedono, A. ; Ujihira, Y. ; Wei, L. ; Tanigawa, S.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.277-282,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
7.

国際会議録
国際会議録
7. MONOENERGETIC POSITRON BEAM STUDIES OF OXYGEN IN SINGLE CRYSTAL SILICON - STRESS INDUCED CLUSTERING OF OXYGEN ATOMS IN SILICON
Nagai, R. ; Takera, E. ; Tabuki, Y. ; Wei, L. ; Tanigawa, S
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.283-288,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
8.

国際会議録
国際会議録
8. THE STUDY OF Si, Se AND O-IMPLANTED GaAs BY SLOW POSITRONS
Fujii, S. ; Shikata, S. ; Wei, L. ; Tanigawa, S.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.343-348,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262
9.

国際会議録
国際会議録
9. DEFECTS INTRODUCED BY LOW DOSE Be-IMPLANTATION PROBED BY A MONOENERGETIC POSITRON BEAM
Uedono, A. ; Ujihira, Y. ; Wei, L. ; Tabuki, Yasushi ; Tanigawa, Shoichiro ; Wada, K ; Nakanishi, H.
出版情報: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.325-330,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 262