1.

国際会議録
国際会議録
1. EPITAXIAL PHASE FORMATION OF FeSi2 IN AN Fe-IMPLANTED Si BY ION IRRADIATION AND RAPID THERMAL ANNEALING
Lin, X.W. ; Behar, M. ; Desimoni, J. ; Bernas, H. ; Swider, W. ; Liliental-Weber, Z. ; Washburn, J.
出版情報: Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.535-540,  1993.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 279
2.

国際会議録
国際会議録
2. INVESTIGATION OF MISFIT DISLOCATION CONFIGURATIONS IN MBE-GROWN InGaAs LAYERS ON MISALIGNED GaAs(001) SUBSTRATES
Werner, P. ; Zakharov, N.D. ; Chen, Y. ; Liliental-Weber, Z. ; Washburn, J. ; Klem, J.F. ; Tsao, J.Y.
出版情報: Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.811-814,  1993.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 283
3.

国際会議録
国際会議録
3. THIN FILM Ag/YBCO MULTISTRUCTURES FOR METAL CONTACT APPLICATIONS
Powers, M. ; Gronsky, R. ; Washburn, J.
出版情報: Layered superconductors : fabrication, properties, and applications : symposium held April 27-May 1, 1992, in San Francisco, California, U.S.A..  pp.825-830,  1992.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 275
4.

国際会議録
国際会議録
4. ELECTRICAL AND STRUCTURAL PROPERTIES OF Ti CONTACTS ON AN ATOMICALLY CLEAN N-TYPE GaAs SURFACE
Lin, X.W. ; Liliental-Weber, Z. ; Swider, W. ; McCants, T. ; Newman, N. ; Spicer, W.E. ; Washburn, J. ; Weber, E.R.
出版情報: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.665-670,  1993.  Pittsburgh, Pa..  Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 281
5.

国際会議録
国際会議録
5. Polarity of GaN
Liliental-Weber, Z. ; Benamara, M. ; Richter, O. ; Swider, W. ; Washburn, J. ; Grzegory, I. ; Porowski, S. ; Yang, J. W. ; Nakamura, S.
出版情報: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.363-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 512
6.

国際会議録
国際会議録
6. Nanotubes in GaN
Liliental-Weber, Z. ; Chen, Y. ; Ruvimov, S. ; Swider, W. ; Washburn, J.
出版情報: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.417-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 449
7.

国際会議録
国際会議録
7. COMPARISON BETWEEN ION-BEAM AND THERMAL-ANNEALING INDUCED SOLID PHASE EPITAXY IN Fe-IMPLANTED Si
Lin, X. W. ; Desimoni, J. ; Bernas, H. ; Liliental-Weber, Z. ; Washburn, J.
出版情報: Silicides, germanides, and their interfaces : Symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A..  pp.97-,  1994.  Pittsburgh, PA.  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 320
8.

国際会議録
国際会議録
8. Metallurgical and electrical properties of capped Au-based metallizations on GaAs
Lin, X. W. ; Piotrowska, A. ; Kaminska, E. ; Liliental-Weber, Z. ; Washburn, J.
出版情報: III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A..  pp.285-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 300
9.

国際会議録
国際会議録
9. TEM Study of Defects in Laterally Overgrown GaN Layers
Liliental-Weber, Z. ; Benamara, M. ; Swider, W. ; Washburn, J. ; Park, J. ; Grudowski, P. A. ; Eiting, C. J. ; Dupuis, R. D.
出版情報: GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A..  pp.G4.6.1-,  1999.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 537
10.

国際会議録
国際会議録
10. Role of Dopants and Impurities on Pinhole Formation; Defects Formed at InGaN/GaN and AlGaN/GaN Quantum Wells
Liliental-Weber, Z. ; Ruvimov, S. ; Swider, W. ; Kim, Y. ; Washburn, J. ; Nakamura, S. ; Kern, R. S. ; Chen, Y. ; Yang, J. W.
出版情報: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.375-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
シリーズ名: Materials Research Society symposium proceedings
シリーズ巻号: 482